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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D123
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER CODE
BFG520W N3
BFG520W/X N4
PINNING
DESCRIPTION
PIN
BFG250W BFG250W/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
handbook, halfpage
Top view
Fig.1 Simplified outline SOT343N.
34
21
MBK523
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
G
CBO
CES
C
tot
FE
re
T
UM
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−70 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 20 mA; VCE= 6 V 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz; T
maximum unilateral
IC= 20 mA; VCE= 6 V; f = 900 MHz; T
=25°C − 9 − GHz
amb
=25°C − 17 − dB
amb
power gain
2
|
|S
21
F noise figure Γ
insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz; T
; IC= 5 mA; VCE= 6 V; f = 900 MHz − 1.1 1.6 dB
s=Γopt
=25°C16 17 − dB
amb
1998 Oct 02 2
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 70 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
150
MBG248
o
T ( C)
s
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
Fig.2 Power derating curve.
1998 Oct 02 3
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
2
|S
|
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 26 − dBm
V
o
d
2
collector-base breakdown voltage IC=10 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V
emitter-base breakdown voltage IE=10µA; IC= 0 2.5 −−V
collector leakage current VCB=6V; IE=0 −−50 nA
DC current gain IC= 20 mA; VCE= 6 V; see Fig.3 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;
− 0.35 − pF
see Fig.4
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;
T
=25°C; see Fig.5
amb
maximum unilateral power gain;
note 1
IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
I
= 20 mA; VCE= 6 V; f = 2 GHz;
C
T
=25°C
amb
insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
; IC= 5 mA; VCE=6V;
s=Γopt
− 9 − GHz
− 17 − dB
− 11 − dB
16 17 − dB
− 1.1 1.6 dB
f = 900 MHz
Γ
; IC= 20 mA; VCE=6V;
s=Γopt
− 1.6 2.1 dB
f = 900 MHz
Γ
; IC= 5 mA; VCE=6V;
s=Γopt
− 1.85 − dB
f = 2 GHz
output power at 1 dB gain
compression
IC= 20 mA; VCE= 6 V; f = 900 MHz;
RL=50Ω; T
amb
=25°C
− 17 − dBm
output voltage note 3 − 275 − mV
second order intermodulation
note 4 −−50 − dB
distortion
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero.
UM
2. IC= 20 mA; VCE=6V; RL=50Ω; T
amb
=25°C;
G
UM
10
-------------------------------------------------------------1S
–()1S
2
S
21
2
11
–()
22
fp= 900 MHz; fq= 902 MHz; measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.
3. dim= −60 dB (DIN45004B); IC= 20 mA; VCE=6V; Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at fp+fq−fr= 793.25 MHz.
4. IC= 20 mA; VCE=6V; Vo=75mV; RL=75Ω; T
amb
=25°C;
fp= 250 MHz; fq= 560 MHz; measured at fp+fq= 810 MHz.
1998 Oct 02 4
dB.log=
2
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG520W; BFG520W/X
150
handbook, halfpage
h
FE
100
50
0
1
10
VCE=6V.
11010
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
MLB807
2
0.6
handbook, halfpage
C
re
(pF)
0.4
0.2
0
0
IC= 0; f= 1 MHz.
2.5 5 7.5 10
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLB808
V (V)
CB
I (mA)
C
MLB809
V =
CE
6 V
3 V
2
10
12
handbook, halfpage
f
T
(GHz)
8
4
0
f = 1 GHz; T
amb
101
=25°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02 5