Philips BFG520W-X, BFG520W Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D123

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Product specification
Supersedes data of August 1995

1998 Oct 02

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER CODE

BFG520W N3
BFG520W/X N4

PINNING

DESCRIPTION

PIN

BFG250W BFG250W/X

1 collector collector
2 base emitter
3 emitter base
4 emitter emitter

handbook, halfpage

Top view

Fig.1 Simplified outline SOT343N.

34

21

MBK523

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f
G

CBO
CES

C

tot

FE

re

T

UM

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−70 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 20 mA; VCE= 6 V 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz; T
maximum unilateral

IC= 20 mA; VCE= 6 V; f = 900 MHz; T

=25°C − 9 − GHz

amb

=25°C − 17 − dB

amb

power gain

2

|

|S

21

F noise figure Γ

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz; T

; IC= 5 mA; VCE= 6 V; f = 900 MHz − 1.1 1.6 dB

s=Γopt

=25°C16 17 − dB

amb

1998 Oct 02 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 70 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

150

MBG248

o

T ( C)

s

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

Fig.2 Power derating curve.

1998 Oct 02 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

h

FE

C

re

f

T

G

UM

2

|S

|

21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 26 − dBm
V

o

d

2

collector-base breakdown voltage IC=10 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V
emitter-base breakdown voltage IE=10µA; IC= 0 2.5 −−V
collector leakage current VCB=6V; IE=0 −−50 nA
DC current gain IC= 20 mA; VCE= 6 V; see Fig.3 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;

− 0.35 − pF

see Fig.4

transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;

T

=25°C; see Fig.5

amb

maximum unilateral power gain;
note 1

IC= 20 mA; VCE= 6 V; f = 900 MHz;
T

=25°C

amb

I

= 20 mA; VCE= 6 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

; IC= 5 mA; VCE=6V;

s=Γopt

− 9 − GHz

− 17 − dB

− 11 − dB

16 17 − dB

− 1.1 1.6 dB

f = 900 MHz

Γ

; IC= 20 mA; VCE=6V;

s=Γopt

− 1.6 2.1 dB

f = 900 MHz

Γ

; IC= 5 mA; VCE=6V;

s=Γopt

− 1.85 − dB

f = 2 GHz

output power at 1 dB gain
compression

IC= 20 mA; VCE= 6 V; f = 900 MHz;
RL=50Ω; T

amb

=25°C

− 17 − dBm

output voltage note 3 − 275 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero.

UM

2. IC= 20 mA; VCE=6V; RL=50Ω; T

amb

=25°C;

G

UM

10

-------------------------------------------------------------­1S

–()1S

2

S

21

2

11

–()

22

fp= 900 MHz; fq= 902 MHz; measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.

3. dim= −60 dB (DIN45004B); IC= 20 mA; VCE=6V; Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at fp+fq−fr= 793.25 MHz.

4. IC= 20 mA; VCE=6V; Vo=75mV; RL=75Ω; T

amb

=25°C;

fp= 250 MHz; fq= 560 MHz; measured at fp+fq= 810 MHz.

1998 Oct 02 4

dB.log=

2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

150

handbook, halfpage

h

FE

100

50

0

1

10

VCE=6V.

11010

I (mA)

C

Fig.3 DC current gain as a function of collector

current; typical values.

MLB807

2

0.6

handbook, halfpage

C

re

(pF)

0.4

0.2

0

0

IC= 0; f= 1 MHz.

2.5 5 7.5 10

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLB808

V (V)

CB

I (mA)

C

MLB809

V =

CE

6 V

3 V

2

10

12

handbook, halfpage

f

T

(GHz)

8

4

0

f = 1 GHz; T

amb

101

=25°C.

Fig.5 Transition frequency as a function of

collector current; typical values.

1998 Oct 02 5