Philips BFG505XR Technical data
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BFG505W; BFG505W/X;
BFG505W/XR
NPN 9 GHz wideband transistors
Product specification
Supersedes data of 1998 Oct 02
2000 Oct 30
Philips Semiconductors Product specification
a
NPN 9 GHz wideband transistors
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
TYPE NUMBER CODE
BFG505W N0
BFG505W/X N1
BFG505W/XR P0
PINNING
PIN DESCRIPTION
BFG505W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG505W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG505W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
BFG505W; BFG505W/X;
BFG505W/XR
age
Top view
Fig.1 SOT343N.
lfpage
21
Top view
Fig.2 SOT343R.
34
21
MBK523
43
MSB842
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
|s
|
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−18 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.2 − pF
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz; T
maximum unilateral
power gain
IC= 5 mA; VCE= 6 V; f = 900 MHz; T
I
= 5 mA; VCE= 6 V; f = 2 GHz; T
C
insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz; T
; IC= 1.25 mA; VCE= 6 V; f = 2 GHz − 1.9 − dB
s=Γopt
=25°C − 9 − GHz
amb
=25°C − 19 − dB
amb
=25°C12−dB
amb
=25°C15 16 − dB
amb
2000 Oct 30 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X;
BFG505W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 18 mA
total power dissipation Ts≤ 85 °C; see Fig.3; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
150
MBG248
o
T ( C)
s
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
Fig.3 Power derating curve.
2000 Oct 30 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X;
BFG505W/XR
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
2
|s
|
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 10 − dBm
collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector leakage current VCB=6V; IE=0 −−50 nA
DC current gain IC= 5 mA; VCE= 6 V see Fig.4 60 120 250
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;
T
=25°C; see Fig.6
amb
− 9 − GHz
collector capacitance IE=ie= 0; VCB=6V; f=1MHz − 0.3 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 0.4 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;
− 0.2 − pF
see Fig.5
maximum unilateral power gain;
note 1
insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz;
IC= 5 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
I
= 5 mA; VCE= 6 V; f = 2 GHz;
C
T
=25°C
amb
T
=25°C
amb
; IC= 1.25 mA; VCE=6V;
s=Γopt
− 19 − dB
− 12 − dB
15 16 − dB
− 1.2 1.7 dB
f = 900 MHz
Γ
; IC= 5 mA; VCE=6V;
s=Γopt
− 1.6 2.1 dB
f = 900 MHz
Γ
s=Γopt
; IC= 1.25 mA; VCE=6V;
− 1.9 − dB
f = 2 GHz
output power at 1 dB gain
compression
IC= 5 mA; VCE= 6 V; f = 900 MHz;
RL=50Ω; T
amb
=25°C
− 4 − dBm
Notes
1. G
2. IC= 5 mA; VCE=6V; RL=50Ω; T
is the maximum unilateral power gain, assuming s12 is zero.
UM
=25°C;
amb
fp= 900 MHz; fq= 902 MHz;
measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.
2000 Oct 30 4
2
s
G
UM
10
-------------------------------------------------------1s
21
2
–()1s
11
–()
dB.log=
2
22
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors
250
handbook, halfpage
h
FE
200
150
100
50
0
−3
10
−2
10
−1
10
110
MRA639
I
(mA)
C
10
BFG505W; BFG505W/X;
BFG505W/XR
0.4
handbook, halfpage
C
re
(pF)
0.3
0.2
0.1
2
0
0
24
6
MLC032
810
V (V)
CB
VCE=6V.
Fig.4 DC current gain as a function of collector
current; typical values.
CE
CE
I (mA)
C
MLC033
12
handbook, halfpage
f
T
(GHz)
8
4
0
1
V = 6 V
V = 3 V
110
10
IC= 0; f= 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
2
10
f = 1 GHz; T
amb
=25°C.
Fig.6 Transition frequency as a function of
collector current; typical values.
2000 Oct 30 5
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