Datasheet BFG505XR Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

BFG505W; BFG505W/X; BFG505W/XR

NPN 9 GHz wideband transistors

Product speciﬁcation Supersedes data of 1998 Oct 02

2000 Oct 30

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages.

MARKING

TYPE NUMBER CODE

BFG505W N0 BFG505W/X N1 BFG505W/XR P0

PINNING

PIN DESCRIPTION

BFG505W (see Fig.1)

1 collector 2 base 3 emitter 4 emitter

BFG505W/X (see Fig.1)

1 collector 2 emitter 3 base 4 emitter

BFG505W/XR (see Fig.2)

1 collector 2 emitter 3 base 4 emitter

BFG505W; BFG505W/X;

BFG505W/XR

age

Top view

Fig.1 SOT343N.

lfpage

Top view

Fig.2 SOT343R.

MBK523

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO

CES

tot

F noise ﬁgure Γ

collector-base voltage open emitter −−20 V collector-emitter voltage RBE=0 −−15 V collector current (DC) −−18 mA total power dissipation Ts≤ 85 °C −−500 mW DC current gain IC= 5 mA; VCE= 6 V 60 120 250 feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.2 − pF transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz; T maximum unilateral

power gain

IC= 5 mA; VCE= 6 V; f = 900 MHz; T I

= 5 mA; VCE= 6 V; f = 2 GHz; T

insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz; T

; IC= 1.25 mA; VCE= 6 V; f = 2 GHz − 1.9 − dB

s=Γopt

=25°C − 9 − GHz

amb

=25°C − 19 − dB

amb

=25°C12−dB

amb

=25°C15 16 − dB

amb

2000 Oct 30 2

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

CBO

CES

EBO

tot

stg

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-s

collector-base voltage open emitter − 20 V collector-emitter voltage RBE=0 − 15 V emitter-base voltage open collector − 2.5 V collector current (DC) − 18 mA total power dissipation Ts≤ 85 °C; see Fig.3; note 1 − 500 mW storage temperature −65 +150 °C junction temperature − 175 °C

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

150

MBG248

T ( C)

600

handbook, halfpage

tot

(mW)

400

200

0 50 100 200

Fig.3 Power derating curve.

2000 Oct 30 3

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(BR)CBO

(BR)CES

(BR)EBO

CBO

F noise ﬁgure Γ

ITO third order intercept point note 2 − 10 − dBm

collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V collector leakage current VCB=6V; IE=0 −−50 nA DC current gain IC= 5 mA; VCE= 6 V see Fig.4 60 120 250 transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;

=25°C; see Fig.6

amb

− 9 − GHz

collector capacitance IE=ie= 0; VCB=6V; f=1MHz − 0.3 − pF emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 0.4 − pF feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;

− 0.2 − pF

see Fig.5

maximum unilateral power gain; note 1

insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz;

IC= 5 mA; VCE= 6 V; f = 900 MHz; T

=25°C

amb

= 5 mA; VCE= 6 V; f = 2 GHz;

=25°C

amb

=25°C

amb

; IC= 1.25 mA; VCE=6V;

s=Γopt

− 19 − dB

− 12 − dB

15 16 − dB

− 1.2 1.7 dB

f = 900 MHz

; IC= 5 mA; VCE=6V;

s=Γopt

− 1.6 2.1 dB

f = 900 MHz

s=Γopt

; IC= 1.25 mA; VCE=6V;

− 1.9 − dB

f = 2 GHz

output power at 1 dB gain compression

IC= 5 mA; VCE= 6 V; f = 900 MHz; RL=50Ω; T

amb

=25°C

− 4 − dBm

Notes

1. G

2. IC= 5 mA; VCE=6V; RL=50Ω; T

is the maximum unilateral power gain, assuming s12 is zero.

=25°C;

amb

fp= 900 MHz; fq= 902 MHz; measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.

2000 Oct 30 4

-------------------------------------------------------1s

–()1s

–()

dB.log=

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

250

handbook, halfpage

200

150

100

−3

−2

−1

110

MRA639

(mA)

BFG505W; BFG505W/X;

BFG505W/XR

0.4

handbook, halfpage

(pF)

0.3

0.2

0.1

MLC032

810

V (V)

VCE=6V.

Fig.4 DC current gain as a function of collector

current; typical values.

I (mA)

MLC033

handbook, halfpage

(GHz)

V = 6 V

V = 3 V

110

IC= 0; f= 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

f = 1 GHz; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current; typical values.

2000 Oct 30 5

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

MLC034

MSG G

I (mA)

handbook, halfpage

gain (dB)

48 12

handbook, halfpage

gain (dB)

MSG

BFG505W; BFG505W/X;

BFG505W/XR

MLC035

max

48 12

I (mA)

f = 900 MHz; VCE=6V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

gain (dB)

MSG

f (MHz)

MLC036

f = 2 GHz; VCE=6V.

Fig.8 Gain as a function of collector current;

typical values.

f (MHz)

MLC037

max

handbook, halfpage

gain (dB)

MSG

IC= 1.25 mA; VCE=6V.

Fig.9 Gain as a function of frequency; typical

values.

2000 Oct 30 6

IC= 5 mA; VCE=6V.

Fig.10 Gain as a function of frequency; typical

values.

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

MLC038

(dB)

handbook, halfpage

f = 2000 MHz

1000 MHz

900 MHz 500 MHz

I (mA)

BFG505W; BFG505W/X;

BFG505W/XR

MRA650

20 G

ass

(dB)

−5

(dB)

min

f = 900 MHz

2000 MHz 1000 MHz

900 MHz

500 MHz

−1

1000 MHz 2000 MHz

ass

min

IC (mA)

handbook, halfpage

10110

VCE=6V.

Fig.11 Minimum noise figure as a function of

collector current; typical values.

(dB)

I = 5 mA

1.25 mA

f (MHz)

handbook, halfpage

MLC039

VCE=6V.

Fig.12 Associated available gain as a function of

collector current; typical values.

MRA651

min

5 mA

1.25 mA

IC = 1.25 mA

handbook, halfpage

F (dB)

5 mA

ass

min

f (MHz)

ass

(dB)

−5

VCE=6V.

Fig.13 Minimum noise figure as a function of

frequency; typical values.

2000 Oct 30 7

VCE=6V.

Fig.14 Associated available gain as a function of

frequency; typical values.

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

−135°

135°

0.2

pot. unst. region

0.5

0.2

0.5

handbook, full pagewidth

stability circle

180°

f = 900 MHz; VCE= 6 V; IC= 1.25 mA; Zo=50Ω.

90°

= 1. 2 dB

min

0.5 1 5

−90°

F = 1.5 dB

F = 2 dB

F = 3 dB

OPT

BFG505W; BFG505W/X;

BFG505W/XR

1.0

45°

−45°

MRA652

0.8

0.6

0.4

0.2

0°

1.0

Fig.15 Common emitter noise figure circles; typical values.

handbook, full pagewidth

stability circle

180°

f = 2 GHz; VCE= 6 V; IC= 1.25 mA; Zo=50Ω.

pot. unst. region

135°

−135°

0.5

0.2

0.2 0.5 2 5

0.2

0.5

90°

F = 3 dB

F = 4 dB

−90°

F = 2.5 dB

min

OPT

= 1. 9 dB

1.0

45°

−45°

MRA653

0.8

0.6

0.4

0.2

0°

1.0

Fig.16 Common emitter noise figure circles; typical values.

2000 Oct 30 8

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

handbook, full pagewidth

VCE= 6 V; IC=5mA;Zo=50Ω.

180

135

0.5

0.2

0.2 1

0.2

0.5

3 GHz

BFG505W; BFG505W/X;

BFG505W/XR

40 MHz

MLC040

1.0

0.8

0.6

0.4

0.2

1.0

handbook, full pagewidth

VCE= 6 V; IC= 5 mA.

Fig.17 Common emitter input reflection coefficient (s11); typical values.

135

40 MHz

180

15 12 9 6 3

3 GHz

MLC041

Fig.18 Common emitter forward transmission coefficient (s21); typical values.

2000 Oct 30 9

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

handbook, full pagewidth

135

180

0.25 0.20 0.15 0.10 0.05

135

3 GHz

40 MHz

BFG505W; BFG505W/X;

BFG505W/XR

VCE= 6 ; IC= 5 mA.

Fig.19 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

VCE= 6 V; IC= 5 mA; Zo=50Ω.

180

135

0.5

0.2

0.2 0.5 2

0.2

0.5

1 5

3 GHz

40 MHz

MLC042

MLC043

1.0

0.8

0.6

0.4

0.2

1.0

Fig.20 Common emitter output reflection coefficient (s22); typical values.

2000 Oct 30 10

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

SPICE parameters for the BFG505W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 134.1 aA 2 BF 180.0 − 3 NF 0.988 − 4 VAF 38.34 V 5 IKF 150.0 mA 6 ISE 27.81 fA 7 NE 2.051 − 8 BR 55.19 − 9 NR 0.982 − 10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062 − 14 RB 20.00 Ω 15 IRB 1.000 µA 16 RBM 20.00 Ω 17 RE 1.171 Ω 18 RC 4.350 Ω

(1)

21 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303 − 25 TF 7.037 ps 26 XTF 12.34 − 27 VTF 1.701 V 28 ITF 30.64 mA 29 PTF 0.000 deg 30 CJC 242.4 fF 31 VJC 188.6 mV 32 MJC 0.041 − 33 XCJC 0.130 − 34 TR 1.332 ns

(1)

XTB 0.000 − EG 1.110 eV XTI 3.000 −

CJS 0.000 F

BFG505W; BFG505W/X;

BFG505W/XR

SEQUENCE No. PARAMETER VALUE UNIT

(1)

37 38 FC 0.897 −

Note

1. These parameters have not been extracted, the default values are shown.

handbook, halfpage

L1 L2

be ce

QLB= 50; QLE= 50; QL

= scaling frequency = 1 GHz.

Fig.21 Package equivalent circuitSOT343N;

SOT343R.

List of components (see Fig.21)

DESIGNATION VALUE UNIT

L1 0.34 nH L2 0.10 nH L3 0.25 nH L

VJS 750.0 mV MJS 0.000 −

B,E

(f) = QL

B,E

√(f/fc)

MBC964

70 fF 50 fF 115 fF

0.40 nH

CB' C'

2000 Oct 30 11

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

PACKAGE OUTLINES

Plastic surface mounted package; 4 leads SOT343N

v M

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.8

max

0.1

0.4

0.3

0.7

0.5

0.25

0.10

0 1 2 mm

2.2

1.8

w M

1.35

1.15

1.3

scale

2.2

2.0

0.45

0.15

detail X

Qwv

0.23

0.13

0.2y0.10.21.15

OUTLINE VERSION

SOT343N

IEC JEDEC EIAJ

REFERENCES

2000 Oct 30 12

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

v M

w M

DIMENSIONS (mm are the original dimensions)

1.1

0.8

max

0.1

UNIT

0.4

0.3

0.7

0.5

0.25

0.10

0 1 2 mm

scale

2.2

1.35

1.15

1.3

1.8

detail X

2.2

0.45

2.0

0.15

Qwv

0.23

0.13

0.2y0.10.21.15

OUTLINE

VERSION

SOT343R

IEC JEDEC EIAJ

REFERENCES

2000 Oct 30 13

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

DATA SHEET STATUS

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

Preliminary speciﬁcation Qualiﬁcation This datasheet contains preliminary data, andsupplementarydata will be

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese orat anyother conditionsabovethose givenin the Characteristics sectionsof the specification isnot implied. Exposure to limiting values for extended periods may affect device reliability.

Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation orwarrantythat suchapplications willbe suitable for the specified use without further testing or modification.

PRODUCT

STATUS

DEFINITIONS

product development. Speciﬁcation may change in any manner without notice.

published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably beexpected toresult inpersonal injury.Philips Semiconductorscustomers usingorselling theseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuse ofany oftheseproducts, conveysno licenceortitle under any patent, copyright, or mask work right to these products,and makesno representationsor warrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

(1)

2000 Oct 30 14

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X;

BFG505W/XR

NOTES

2000 Oct 30 15

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2000

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 613516/04/pp16 Date of release: 2000Oct 30 Document order number: 9397 750 07541

Datasheet BFG505XR Datasheet (Philips)

Specifications and Main Features

Frequently Asked Questions

User Manual