Philips BFG505W-X, BFG505W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D123
BFG505W; BFG505W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505W; BFG505W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER CODE
BFG505W N0
BFG505W/X N1
PINNING
DESCRIPTION
PIN
BFG505W BFG505W/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
handbook, halfpage
Top view
Fig.1 Simplified outline SOT343N.
34
21
MBK523
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
|
|S
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−18 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.2 − pF
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz; T
maximum unilateral
power gain
IC= 5 mA; VCE= 6 V; f = 900 MHz; T
I
= 5 mA; VCE= 6 V; f = 2 GHz; T
C
insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz; T
; IC= 1.25 mA; VCE=6V; f=2GHz − 1.9 − dB
s=Γopt
=25°C − 9 − GHz
amb
=25°C − 19 − dB
amb
=25°C12−dB
amb
=25°C15 16 − dB
amb
1998 Oct 02 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505W; BFG505W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 18 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
600
handbook, halfpage
P
tot
(mW)
400
200
MBG248
0
0 50 100 200
150
o
T ( C)
s
Fig.2 Power derating curve.
1998 Oct 02 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505W; BFG505W/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
2
|S
|
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 10 − dBm
collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector leakage current VCB=6V; IE=0 −−50 nA
DC current gain IC= 5 mA; VCE= 6 V see Fig.3 60 120 250
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;
T
=25°C; see Fig.5
amb
− 9 − GHz
collector capacitance IE=ie= 0; VCB=6V; f=1MHz − 0.3 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 0.4 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;
− 0.2 − pF
see Fig.4
maximum unilateral power gain;
note 1
insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz;
IC= 5 mA; VCE= 6 V; f = 900 MHz;
T
=25°C
amb
I
= 5 mA; VCE= 6 V; f = 2 GHz;
C
T
=25°C
amb
T
=25°C
amb
; IC= 1.25 mA; VCE=6V;
s=Γopt
− 19 − dB
− 12 − dB
15 16 − dB
− 1.2 1.7 dB
f = 900 MHz
Γ
; IC= 5 mA; VCE=6V;
s=Γopt
− 1.6 2.1 dB
f = 900 MHz
Γ
; IC= 1.25 mA; VCE=6V;
s=Γopt
− 1.9 − dB
f = 2 GHz
output power at 1 dB gain
compression
IC= 5 mA; VCE= 6 V; f = 900 MHz;
RL=50Ω; T
amb
=25°C
− 4 − dBm
Notes
1. G
2. IC= 5 mA; VCE=6V; RL=50Ω; T
is the maximum unilateral power gain, assuming S12 is zero.
UM
=25°C;
amb
fp= 900 MHz; fq= 902 MHz;
measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.
1998 Oct 02 4
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
Philips Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505W; BFG505W/X
250
handbook, halfpage
h
FE
200
150
100
50
0
−3
10
VCE=6V.
−2
10
−1
10
110
MRA639
I
(mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
0.4
handbook, halfpage
C
re
(pF)
0.3
0.2
0.1
2
10
0
0
IC= 0; f= 1 MHz.
24
6
MLC032
810
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
CE
CE
I (mA)
C
MLC033
2
10
12
handbook, halfpage
f
T
(GHz)
8
4
0
1
f = 1 GHz; T
amb
=25°C.
V = 6 V
V = 3 V
110
10
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02 5
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