Philips BFG505-X, BFG505 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D071

BFG505; BFG505/X

NPN 9 GHz wideband transistors

Product specification
Supersedes data of September 1995

1998 Oct 02

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG505; BFG505/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.

MARKING

TYPE NUMBER CODE

BFG505 N33
BFG505/X N39

PINNING

DESCRIPTION

PIN

BFG505 BFG505/X

1 collector collector
2 base emitter
3 emitter base
4 emitter emitter

handbook, 2 columns

12

Top view

Fig.1 Simplified outline SOT143B.

34

MSB014

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM

2

S



21

F noise figure Γ

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−18 mA
total power dissipation Ts≤ 130 °C −−150 mW
DC current gain VCE=6V; IC= 5 mA 60 120 250
feedback capacitance VCB=6V; IC=ic= 0; f = 1 MHz − 0.2 − pF
transition frequency VCE=6V; IC= 5 mA; f = 1 GHz − 9 − GHz
maximum unilateral

power gain

insertion power gain VCE=6V; Ic= 5 mA;

VCE=6V; IC= 5 mA;
T

=25°C; f = 900 MHz

amb

V

=6V; IC= 5 mA;

CE

T

=25°C; f = 2 GHz

amb

T

=25°C; f = 900 MHz

amb

= Γ

s

opt;VCE

T

=25°C; f = 900 MHz

amb

Γ

= Γ

s

opt;VCE

T

=25°C; f = 900 MHz

amb

Γ

= Γ

s

opt

T

=25°C; f = 2 GHz

amb

=6V; Ic= 1.25 mA;

=6V; Ic= 5 mA;

; VCE=6V; Ic= 1.25 mA;

− 20 − dB

− 13 − dB

16 17 − dB

− 1.2 1.7 dB

− 1.6 2.1 dB

− 1.9 − dB

1998 Oct 02 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG505; BFG505/X

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

is the temperature at the soldering point of the collector pin.

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 18 mA
total power dissipation Ts≤ 130 °C; see Fig.2; note 1 − 150 mW
storage temperature range −65 150 °C
junction temperature − 175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

is the temperature at the soldering point of the collector pin.

1. T

s

200

handbook, halfpage

P

tot

(mW)

150

100

50

MRA638-1

0

0 50 100 200

150

Ts (°C)

Fig.2 Power derating curve.

1998 Oct 02 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG505; BFG505/X

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

S



21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 10 − dBm

collector cut-off current VCB=6V; IE=0 −− 50 nA
DC current gain IC= 5 mA; VCE= 6 V; see Fig.3 60 120 250
emitter capacitance IC=ic=0 VEB= 0.5 V; f = 1 MHz − 0.4 − pF
collector capacitance VCB=6V; IE=ie= 0; f = 1 MHz − 0.3 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz; see Fig.4 − 0.2 − pF
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;

− 9 − GHz

see Fig.5

maximum unilateral
power gain; note 1

2

insertion power gain Ic= 5 mA; VCE=6V;

output power at 1 dB gain
compression

IC= 5 mA; VCE=6V;
T

=25°C; f = 900 MHz

amb

I

= 5 mA; VCE=6V;

c

T

=25°C; f = 2 GHz

amb

T

=25°C; f = 900 MHz

amb

= Γ

; IC= 1.25 mA; VCE=6V;

s

opt

T

=25°C; f = 900 MHz

amb

= Γ

Γ

T

Γ

T

; IC= 5 mA; VCE=6V;

s

opt

=25°C; f = 900 MHz

amb

= Γ

; IC= 1.25 mA; VCE=6V;

s

opt

=25°C; f = 2 GHz

amb

IC= 5 mA; VCE=6V; RL=50Ω;
T

=25°C; f = 900 MHz

amb

− 20 − dB

− 13 − dB

16 17 − dB

− 1.2 1.7 dB

− 1.6 2.1 dB

− 1.9 − dB

− 4 − dBm

Notes

1. G

2. VCE= 6 V; IC= 5 mA; RL=50Ω; T

is the maximum unilateral power gain, assuming S12is zero and

UM

=25°C;

amb

fp= 900 MHz; fq= 902 MHz;
measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.

1998 Oct 02 4

2

S

G

UM

--------------------------------------------------------------

10

1S

–()1S

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 9 GHz wideband transistors BFG505; BFG505/X

250

handbook, halfpage

h

FE

200

150

100

50

0

−3

10

VCE=6V.

−2

10

−1

10

110

MRA639

I

(mA)

C

Fig.3 DC current gain as a function of collector

current.

0.4

handbook, halfpage

C

re

(pF)

0.3

0.2

0.1

2

10

0

02 10

IC= 0; f= 1 MHz.

46 8

MRA640

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

12

handbook, halfpage

f

T

(GHz)

8

4

0

−1

10

T

=25°C; f= 1GHz.

amb

11010

V

CE

V

CE

Fig.5 Transition frequency as a function of

collector current.

= 6 V

= 3 V

IC (mA)

MRA641

2

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

04

VCE= 6 V; f = 900 MHz.
GUM= maximum unilateral power gain;

MSG = maximum stable gain;

= maximum available gain.

G

max

G

UM

MSG

812

Fig.6 Gain as a function of collector current.

MRA642

I

(mA)

C

1998 Oct 02 5