Philips BFG425W Datasheet

DISCRETE SEMICONDUCTORS

BFG425W

NPN 25 GHz wideband transistor

Product specification
Supersedes data of 1997 Oct 28
File under Discrete Semiconductors, SC14

1998 Mar 11

Philips Semiconductors Product specification

NPN 25 GHz wideband transistor BFG425W

FEATURES

• Very high power gain

• Low noise figure

• High transition frequency

• Emitter is thermal lead

• Low feedback capacitance.

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors

• Pagers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.

PINNING

PIN DESCRIPTION

1 emitter
2 base
3 emitter
4 collector

handbook, halfpage

Marking code: P5.

43

21

Top view

MSB842

Fig.1 Simplified outline SOT343R.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

max

F noise figure I

collector-base voltage open emitter −−10 V
collector-emitter voltage open base −−4.5 V
collector current (DC) − 25 30 mA
total power dissipation Ts≤ 103 °C −−135 mW
DC current gain IC= 25 mA; VCE=2V; Tj=25°C 5080120
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz − 95 − fF
transition frequency IC= 25 mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC= 25 mA; VCE= 2 V; f = 2 GHz; T

= 2 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ

C

=25°C − 25 − GHz

amb

=25°C − 20 − dB

amb

opt

− 1.2 − dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1998 Mar 11 2

Philips Semiconductors Product specification

NPN 25 GHz wideband transistor BFG425W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 10 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 30 mA
total power dissipation Ts≤ 103 °C; note 1; see Fig.2 − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

handbook, halfpage

P

tot

(mW)

thermal resistance from junction to soldering point 350 K/W

200

150

100

50

0

0 40 160

80 120

MGG681

Ts (°C)

Fig.2 Power derating curve.

1998 Mar 11 3

Philips Semiconductors Product specification

NPN 25 GHz wideband transistor BFG425W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

S

21

F noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown voltage IC= 2.5 µA; IE=0 10 −−V
collector-emitter breakdown voltage IC= 1 mA; IB= 0 4.5 −−V
emitter-base breakdown voltage IE= 2.5 µA; IC=0 1 −−V
collector-base leakage current IE= 0; VCB= 4.5 V −−15 nA
DC current gain IC= 25 mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie= 0; VCB= 2 V; f = 1 MHz − 300 − fF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 575 − fF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz;

− 95 − fF

see Fig.4

transition frequency IC= 25 mA; VCE= 2 V; f = 2 GHz;

T

=25°C; see Fig.5

amb

maximum power gain; note 1 IC= 25 mA; VCE= 2 V; f = 2 GHz;

T

=25°C; see Figs 7 and 8

amb

insertion power gain I

2

output power at 1 dB gain
compression

= 25 mA; VCE= 2 V; f = 2 GHz;

C

T

=25°C; see Fig.8

amb

= 2 mA; VCE= 2 V; f = 900 MHz;

C

ΓS= Γ

I

C

ΓS= Γ

; see Fig.13

opt

= 2 mA; VCE= 2 V; f = 2 GHz;

; see Fig.13

opt

IC= 25 mA; VCE= 2 V; f = 2 GHz;
ZS=Z

= 25 mA; VCE= 2 V; f = 2 GHz;

C

ZS=Z

S opt

S opt

; ZL=Z

; ZL=Z

L opt

L opt

; note 2

; note 2

− 25 − GHz

− 20 − dB

− 17 − dB

− 0.8 − dB

− 1.2 − dB

− 12 − dBm

− 22 − dBm

Notes

1. G

is the maximum power gain, if K > 1. If K < 1 then G

max

2. ZS is optimized for noise; ZL is optimized for gain.

1998 Mar 11 4

= MSG; see Figs 6, 7 and 8.

max