Philips BFG410W Datasheet
DISCRETE SEMICONDUCTORS
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
FEATURES
• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN DESCRIPTION
handbook, halfpage
Marking code: P4.
1 emitter
2 base
3 emitter
4 collector
43
21
Top view
MSB842
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F noise figure I
collector-base voltage open emitter −−10 V
collector-emitter voltage open base −−4.5 V
collector current (DC) − 10 12 mA
total power dissipation Ts≤ 110 °C −−54 mW
DC current gain IC= 10 mA; VCE=2V; Tj=25°C 5080120
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz − 45 − fF
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC= 10 mA; VCE= 2 V; f = 2 GHz; T
= 1 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ
C
=25°C − 22 − GHz
amb
=25°C − 21 − dB
amb
opt
− 1.2 − dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11 2
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 10 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 12 mA
total power dissipation Ts≤ 110 °C; note 1; see Fig.2 − 54 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, halfpage
(mW)
thermal resistance from junction to soldering point 750 K/W
120
MGD960
Ts (°C)
60
P
tot
40
20
0
0
40 80 160
Fig.2 Power derating curve.
1998 Mar 11 3
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
S
21
F noise figure I
P
L1
ITO third order intercept point I
collector-base breakdown voltage IC= 2.5 µA; IE=0 10 −−V
collector-emitter breakdown
IC= 1 mA; IB= 0 4.5 −−V
voltage
emitter-base breakdown voltage IE= 2.5 µA; IC=0 1 −−V
collector-base leakage current IE= 0; VCB= 4.5 V −−15 nA
DC current gain IC= 10 mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie= 0; VCB=2V; f=1MHz − 220 − fF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 400 − fF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz;
− 45 − fF
see Fig.4
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Fig.5
amb
maximum power gain; note 1 IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Figs 7 and 8
amb
insertion power gain I
2
= 10 mA; VCE= 2 V; f = 2 GHz;
C
T
=25°C; see Fig.8
amb
= 1 mA; VCE=2V;
C
f = 900 MHz; ΓS= Γ
I
= 1 mA; VCE= 2 V; f = 2 GHz;
C
output power at 1 dB gain
compression
ΓS= Γ
IC= 10 mA; VCE= 2 V; f = 2 GHz;
ZS=Z
C
ZS=Z
; see Fig.13
opt
; ZL=Z
S opt
= 10 mA; VCE= 2 V; f = 2 GHz;
; ZL=Z
S opt
; see Fig.13
opt
; note 2
L opt
; note 2
L opt
− 22 − GHz
− 21 − dB
− 18 − dB
− 0.9 − dB
− 1.2 − dB
− 5 − dBm
− 15 − dBm
Notes
1. G
is the maximum power gain, if K > 1. If K < 1 then G
max
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11 4
= MSG; see Figs 6, 7 and 8.
max
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