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DISCRETE SEMICONDUCTORS
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
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Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
FEATURES
• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN DESCRIPTION
handbook, halfpage
Marking code: P4.
1 emitter
2 base
3 emitter
4 collector
43
21
Top view
MSB842
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F noise figure I
collector-base voltage open emitter −−10 V
collector-emitter voltage open base −−4.5 V
collector current (DC) − 10 12 mA
total power dissipation Ts≤ 110 °C −−54 mW
DC current gain IC= 10 mA; VCE=2V; Tj=25°C 5080120
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz − 45 − fF
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC= 10 mA; VCE= 2 V; f = 2 GHz; T
= 1 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ
C
=25°C − 22 − GHz
amb
=25°C − 21 − dB
amb
opt
− 1.2 − dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11 2
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Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 10 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 12 mA
total power dissipation Ts≤ 110 °C; note 1; see Fig.2 − 54 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, halfpage
(mW)
thermal resistance from junction to soldering point 750 K/W
120
MGD960
Ts (°C)
60
P
tot
40
20
0
0
40 80 160
Fig.2 Power derating curve.
1998 Mar 11 3
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Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
S
21
F noise figure I
P
L1
ITO third order intercept point I
collector-base breakdown voltage IC= 2.5 µA; IE=0 10 −−V
collector-emitter breakdown
IC= 1 mA; IB= 0 4.5 −−V
voltage
emitter-base breakdown voltage IE= 2.5 µA; IC=0 1 −−V
collector-base leakage current IE= 0; VCB= 4.5 V −−15 nA
DC current gain IC= 10 mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie= 0; VCB=2V; f=1MHz − 220 − fF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 400 − fF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz;
− 45 − fF
see Fig.4
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Fig.5
amb
maximum power gain; note 1 IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Figs 7 and 8
amb
insertion power gain I
2
= 10 mA; VCE= 2 V; f = 2 GHz;
C
T
=25°C; see Fig.8
amb
= 1 mA; VCE=2V;
C
f = 900 MHz; ΓS= Γ
I
= 1 mA; VCE= 2 V; f = 2 GHz;
C
output power at 1 dB gain
compression
ΓS= Γ
IC= 10 mA; VCE= 2 V; f = 2 GHz;
ZS=Z
C
ZS=Z
; see Fig.13
opt
; ZL=Z
S opt
= 10 mA; VCE= 2 V; f = 2 GHz;
; ZL=Z
S opt
; see Fig.13
opt
; note 2
L opt
; note 2
L opt
− 22 − GHz
− 21 − dB
− 18 − dB
− 0.9 − dB
− 1.2 − dB
− 5 − dBm
− 15 − dBm
Notes
1. G
is the maximum power gain, if K > 1. If K < 1 then G
max
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11 4
= MSG; see Figs 6, 7 and 8.
max