Philips BFG35 Datasheet

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BFG35

NPN 4 GHz wideband transistor

Product specification
Supersedes data of 1995 Sep 12

1999 Aug 24

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFG35

DESCRIPTION

NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications.It features high
output voltage capabilities.

PINNING

PIN DESCRIPTION

1 emitter
2 base
3 emitter

age

4

4 collector

123

Top view

MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEO

I

C

P

tot

h

FE

f

T

G

UM

V

o

collector-emitter voltage open base −−18 V
DC collector current −−150 mA
total power dissipation up to Ts= 135 °C (note 1) −−1W
DC current gain IC= 100 mA; VCE= 10 V; Tj=25°C25 70 −
transition frequency IC= 100 mA; VCE=10V;

f = 500 MHz; T

amb

=25°C

maximum unilateral power gain IC= 100 mA; VCE=10V;

f = 500 MHz; T
I

= 100 mA; VCE=10V;

C

f = 800 MHz; T

amb

amb

=25°C

=25°C

output voltage IC= 100 mA; VCE=10V;

− 4 − GHz

− 15 − dB

− 11 − dB

− 750 − mV

dim= −60 dB; RL=75Ω;
f

= 793.25 MHz; T

(p+q−r)

amb

=25°C

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 135 °C (note 1) − 1W
storage temperature −65 +150 °C
junction temperature − 175 °C

Note

1. Ts is the temperature at the soldering point of the collector tab.

1999 Aug 24 2

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFG35

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

V

o

d

2

thermal resistance from junction to soldering point up to Ts= 135 °C (note 1) 40 K/W

is the temperature at the soldering point of the collector tab.

collector cut-off current IE= 0; VCB=10V −−1µA
DC current gain IC= 100 mA; VCE=10V 25 70 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 10 − pF
feedback capacitance IC= 0; VCE=10V; f=1MHz − 1.2 − pF
transition frequency IC= 100 mA; VCE=10V;

maximum unilateral power gain
(note 1)

f = 500 MHz; T
IC= 100 mA; VCE=10V;

f = 500 MHz; T
I

= 100 mA; VCE=10V;

C

f = 800 MHz; T

amb

amb

amb

=25°C

=25°C

=25°C

− 4 − GHz

− 15 − dB

− 11 − dB

output voltage note 2 − 750 − mV

note 3 − 800 − mV

second order intermodulation
distortion

note 4 −−55 − dB
note 5 −−57 − dB

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

2. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f

= 793.25 MHz.

(p+q−r)

3. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 445.25 MHz;
Vq=Vo−6 dB; fq= 453.25 MHz;
Vr=Vo−6 dB; fr= 455.25 MHz;
measured at f

= 443.25 MHz.

(p+q−r)

4. IC= 60 mA; VCE= 10 V; RL=75Ω;
Vp=Vq=Vo= 50 dBmV;
f

= 450 MHz; fp= 50 MHz; fq= 400 MHz.

(p+q)

5. IC= 60 mA; VCE= 10 V; RL=75Ω;
Vp=Vq=VO= 50 dBmV;
f

= 810 MHz; fp= 250 MHz; fq= 560 MHz.

(p+q)

1999 Aug 24 3

amb

amb

G

UM

=25°C

=25°C

10

-------------------------------------------------------­1s

–()1s

2

s

21

2

11

–()

dB.log=

2

22

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFG35

V

handbook, full pagewidth

V

BB

input
75

C4

L6

C3

R1

L1C1

Ω

L2

C2

R2

L3

DUT

R3 R4

L5

C6

L4

MBB284

C5

C7

CC

output

75

Ω

Fig.2 Intermodulation and second harmonic test circuit.

List of components (see test circuit)

DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstrip line 75 Ω length 7mm;

width 2.5 mm

L2 microstrip line 75 Ω length 22mm;

width 2.5 mm

L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;

winding pitch 1 mm

L4 microstripline 75 Ω length 19 mm;

width 2.5 mm
L5 Ferroxcube choke 5 µH 3122 108 20153
L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm
R1 metal film resistor 10 kΩ 2322 180 73103
R2 (note 1) metal film resistor 200 Ω 2322 180 73201
R3, R4 metal film resistor 27 Ω 2322 180 73279

Note

1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr= 2.2);
thickness1⁄16inch; thickness of copper sheet1⁄32inch.

1999 Aug 24 4

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFG35

handbook, full pagewidth

handbook, full pagewidth

75
input

V

BB

C3

R1

C1

Ω

L1 L2

C2

R3

L3

R4

L6

80 mm

C4

R2

V

CC

C5

L5

C6

75

L4

MBB299

Ω

output

C7

60 mm

handbook, full pagewidth

Fig.3 Intermodulation test circuit printed circuit board.

1999 Aug 24 5

MBB298

MBB297