![](/html/11/117f/117fcaa328af100e8008a3bfbe53bb9f8660ec973ba06c94f6a13ce7193da93e/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG35
NPN 4 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
![](/html/11/117f/117fcaa328af100e8008a3bfbe53bb9f8660ec973ba06c94f6a13ce7193da93e/bg2.png)
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications.It features high
output voltage capabilities.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
age
4
4 collector
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
collector-emitter voltage open base −−18 V
DC collector current −−150 mA
total power dissipation up to Ts= 135 °C (note 1) −−1W
DC current gain IC= 100 mA; VCE= 10 V; Tj=25°C25 70 −
transition frequency IC= 100 mA; VCE=10V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 100 mA; VCE=10V;
f = 500 MHz; T
I
= 100 mA; VCE=10V;
C
f = 800 MHz; T
amb
amb
=25°C
=25°C
output voltage IC= 100 mA; VCE=10V;
− 4 − GHz
− 15 − dB
− 11 − dB
− 750 − mV
dim= −60 dB; RL=75Ω;
f
= 793.25 MHz; T
(p+q−r)
amb
=25°C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 135 °C (note 1) − 1W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 24 2
![](/html/11/117f/117fcaa328af100e8008a3bfbe53bb9f8660ec973ba06c94f6a13ce7193da93e/bg3.png)
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
V
o
d
2
thermal resistance from junction to soldering point up to Ts= 135 °C (note 1) 40 K/W
is the temperature at the soldering point of the collector tab.
collector cut-off current IE= 0; VCB=10V −−1µA
DC current gain IC= 100 mA; VCE=10V 25 70 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 10 − pF
feedback capacitance IC= 0; VCE=10V; f=1MHz − 1.2 − pF
transition frequency IC= 100 mA; VCE=10V;
maximum unilateral power gain
(note 1)
f = 500 MHz; T
IC= 100 mA; VCE=10V;
f = 500 MHz; T
I
= 100 mA; VCE=10V;
C
f = 800 MHz; T
amb
amb
amb
=25°C
=25°C
=25°C
− 4 − GHz
− 15 − dB
− 11 − dB
output voltage note 2 − 750 − mV
note 3 − 800 − mV
second order intermodulation
distortion
note 4 −−55 − dB
note 5 −−57 − dB
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q−r)
3. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 445.25 MHz;
Vq=Vo−6 dB; fq= 453.25 MHz;
Vr=Vo−6 dB; fr= 455.25 MHz;
measured at f
= 443.25 MHz.
(p+q−r)
4. IC= 60 mA; VCE= 10 V; RL=75Ω;
Vp=Vq=Vo= 50 dBmV;
f
= 450 MHz; fp= 50 MHz; fq= 400 MHz.
(p+q)
5. IC= 60 mA; VCE= 10 V; RL=75Ω;
Vp=Vq=VO= 50 dBmV;
f
= 810 MHz; fp= 250 MHz; fq= 560 MHz.
(p+q)
1999 Aug 24 3
amb
amb
G
UM
=25°C
=25°C
10
-------------------------------------------------------1s
–()1s
2
s
21
2
11
–()
dB.log=
2
22
![](/html/11/117f/117fcaa328af100e8008a3bfbe53bb9f8660ec973ba06c94f6a13ce7193da93e/bg4.png)
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
V
handbook, full pagewidth
V
BB
input
75
C4
L6
C3
R1
L1C1
Ω
L2
C2
R2
L3
DUT
R3 R4
L5
C6
L4
MBB284
C5
C7
CC
output
75
Ω
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstrip line 75 Ω length 7mm;
width 2.5 mm
L2 microstrip line 75 Ω length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 Ω length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 µH 3122 108 20153
L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm
R1 metal film resistor 10 kΩ 2322 180 73103
R2 (note 1) metal film resistor 200 Ω 2322 180 73201
R3, R4 metal film resistor 27 Ω 2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr= 2.2);
thickness1⁄16inch; thickness of copper sheet1⁄32inch.
1999 Aug 24 4
![](/html/11/117f/117fcaa328af100e8008a3bfbe53bb9f8660ec973ba06c94f6a13ce7193da93e/bg5.png)
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
handbook, full pagewidth
handbook, full pagewidth
75
input
V
BB
C3
R1
C1
Ω
L1 L2
C2
R3
L3
R4
L6
80 mm
C4
R2
V
CC
C5
L5
C6
75
L4
MBB299
Ω
output
C7
60 mm
handbook, full pagewidth
Fig.3 Intermodulation test circuit printed circuit board.
1999 Aug 24 5
MBB298
MBB297