Datasheet BFG310W, BFG310XR Datasheet (Philips)

查询BFG310W供应商查询BFG310W供应商

BFG310W/XR

NPN 14 GHz wideband transistor

Rev. 01 — 2 February 2005 Product data sheet

1. Product profile

1.1 General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

1.2 Features

■ High power gain

■ Low noise figure

■ High transition frequency

■ Gold metallization ensures excellent reliability

1.3 Applications

■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVision (SATV) tuners

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
V
I
P
h

C

f

CBO
CEO

C

tot

FE

CBS

T

collector-base voltage open emitter - - 15 V
collector-emitter voltage open base - - 6 V
collector current (DC) - - 10 mA
total power dissipation Tsp≤ 145 °C
DC current gain IC= 5 mA; VCE=3V;

T

=25°C

j

collector-base
capacitance

transition frequency IC= 5 mA; VCE=3V;

VCB= 5 V; f = 1 MHz;
emitter grounded

f = 1 GHz; T

amb

=25°C

[1]

--60mW
60 100 200

- 0.17 0.3 pF

- 14 - GHz

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

MSG maximum stable gain IC= 5 mA; VCE=3V;

2

|

|s

21

insertion power gain IC= 5 mA; VCE=3V;

NF noise figure Γ

[1] Tsp is the temperature at the soldering point of the collector pin.

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

1 collector
2 emitter
3 base
4 emitter

…continued

f = 1.8 GHz; T

f = 1.8 GHz; T
Z

S=ZL

= Γ

s

opt

V

=3V; f=2GHz

CE

amb

amb

=50Ω

; IC= 1 mA;

=25°C

=25°C;

21

-18-dB

-14-dB

-1-dB

43

1

3

2, 4

sym086

3. Ordering information

Table 3: Ordering information

Type number Package

BFG310W/XR - plastic surface mounted package; reverse pinning;

4. Marking

Table 4: Marking codes

Type number Marking code

BFG310W/XR A7*

[1] * = p: made in Hong Kong.

Name Description Version

SOT343R

4 leads

[1]

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 2 of 12

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

[1] Tsp is the temperature at the soldering point of the collector pin.

collector-base voltage open emitter - 15 V
collector-emitter voltage open base - 6 V
emitter-base voltage open collector - 2 V
collector current (DC) - 10 mA
total power dissipation Tsp≤ 145 °C

[1]

-60mW
storage temperature −65 +175 °C
junction temperature - 175 °C

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

[1] Tsp is the temperature at the soldering point of the collector pin.

thermal resistance from junction to solder point Tsp≤ 145 °C

[1]

530 K/W

7. Characteristics

Table 7: Characteristics

Tj=25°C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

h

FE

C

CBS

C

CES

C

EBS

f

T

MSG maximum stable gain I

|s

21

NF noise figure Γ
P

L(1dB)

IP3 third order intercept point I

collector-base cut-off current IE= 0 A; VCB=6V --15nA
DC current gain IC= 5 mA; VCE = 3 V 60 100 200
collector-base capacitance VCB= 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF
collector-emitter capacitance VCE= 5 V; f = 1 MHz; base grounded - 0.22 - pF
emitter-base capacitance VEB= 0.5 V; f = 1 MHz; collector grounded - 0.16 - pF
transition frequency IC= 5 mA; VCE= 3 V; f = 1 GHz;

T

=25°C

amb

= 5 mA; VCE= 3 V; f = 1.8 GHz;

C

T

=25°C

amb

2

|

insertion power gain IC= 5 mA; VCE=3V; T

Z

S=ZL

=50Ω

amb

=25°C;

- 14 - GHz

-18-dB

f = 1.8 GHz - 14 - dB
f = 3 GHz - 11 - dB

= Γ

; IC= 1 mA; VCE= 3 V; f = 2 GHz - 1 - dB

s

opt

output power at 1 dB gain
compression

IC= 5 mA; VCE= 3 V; f = 1.8 GHz;
T

=25°C; ZS=ZL=50Ω

amb

= 5 mA; VCE= 3 V; f = 1.8 GHz;

C

T

=25°C; ZS=ZL=50Ω

amb

- 1.8 - dBm

- 8.5 - dBm

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 3 of 12

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

70

P

tot

(mW)

60

50

40

30

20

10

0

0 20015050 100

001aac177

Tsp (°C)

10

I

C

(mA)

8

6

4

2

0

0653142

IB = 120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

VCE (V)

Fig 1. Power derating curve Fig 2. Collector current as a function of

collector-emitter voltage; typical values

001aac179

G

(dB)

40

30

MSG

C

(pF)

0.20

CBS

0.19

001aac178

001aac180

0.18

0.17

0.16

0.15
054231

VCB (V)

IC= 0 mA; f = 1 MHz. IC= 5 mA; VCE=3V.

Fig 3. Collector-base capacitance as a function of

collector-base voltage; typical values

2

s

20

10

0

10 10

21

2

10

3

10

f (MHz)

4

Fig 4. Gain as a function of frequency; typical values

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 4 of 12

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

90°

+1

+2

−2

5

45°135°

+5

10

−5

−45°−135°

001aac181

180°

+0.5

+0.2

0

−0.2

0.50.2

3 GHz 40 MHz

−0.5

1

−1

−90°

2

VCE=3V; IC= 5 mA; Zo=50Ω.

Fig 5. Common emitter input reflection coefficient (s11); typical values

90°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

45°135°

3 GHz

20 16 12 8 4

180°

40 MHz

0

−90°

0°

−45°−135°

001aac182

VCE=3V; IC= 5 mA.

Fig 6. Common emitter forward transmission coefficient (s21); typical values

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 5 of 12

Philips Semiconductors

0.5 0.4 0.3 0.2 0.1

180°

90°

0

40 MHz

BFG310W/XR

NPN 14 GHz wideband transistor

45°135°

3 GHz

0°

−45°−135°

−90°

001aac183

VCE=3V; IC= 5 mA.

Fig 7. Common emitter reverse transmission coefficient (s12); typical values

90°
+1

+2

−2

5

40 MHz

−45°−135°

45°135°

+5

10

−5

001aac184

0°

180°

+0.5

+0.2

0

−0.2

0.50.2

−0.5

1

−1

−90°

2

3 GHz

1.0

0.8

0.6

0.4

0.2

0

1.0

VCE=3V; IC= 5 mA; Zo=50Ω.

Fig 8. Common emitter output reflection coefficient (s22); typical values

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 6 of 12

Philips Semiconductors

8. Application information

Table 8: SPICE parameters of the BFG310W DIE

Sequence Parameter Value Unit

1 IS 16.17 aA
2 BF 210 ­3NF 1­4 VAF 50 V
5 IKF 59.83 mA
6 ISE 1.726 fA
7 NE 2.114 ­8BR 6­9NR 1­10 VAR 2.3 V
11 IKR 10 A
12 ISC 0 aA
13 NC 1.5 ­14 RB 3.6 Ω
15 RE 2.1 Ω
16 RC 1.6 Ω
17 CJE 115.6 fF
18 VJE 866.3 mV
19 MJE 0.285 ­20 CJC 68.18 fF
21 VJC 601 mV
22 MJC 0.123 ­23 XCJC 1 ­24 FC 0.7 ­25 TF 8.3 ps
26 XTF 10 ­27 VTF 1000 V
28 ITF 150 mA
29 PTF 0 deg
30 TR 0 ns
31 KF 0 ­32 AF 1 ­33 TNOM 25 °C
34 EG 1.014 eV
35 XTB 0 ­36 XTI 8 ­37 Q1.AREA 1 -

BFG310W/XR

NPN 14 GHz wideband transistor

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 7 of 12

Philips Semiconductors

L

B_lead

BFG310W/XR

NPN 14 GHz wideband transistor

L

C_lead

L

C_wire

C

CB

C_base_pad

L

B_wire

BJT1

C_emitter_pad

C

CE

C

BE

CHIP

L

E_wire

L

E_lead

Fig 9. Package equivalent circuit of SOT343R

Table 9: List of components; see

Figure 9

Designation Value Unit

C

CB

C

BE

C

CE

2fF
80 fF

80 fF
C_base_pad 67 fF
C_emitter_pad 142 fF
L

C_wire

L

B_wire

L

E_wire

L

C_lead

L

B_lead

L

E_lead

0.767 nH

0.842 nH

0.212 nH

0.28 nH

0.281 nH

0.1 nH

001aac166

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 8 of 12

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

9. Package outline

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

w M

D

y

e

43

21

b

B

p

e

b

1

1

E

H

E

A

A

1

detail X

AB

L

p

X

v M

A

Q

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

mm

VERSION

SOT343R

A

1.1

0.8

OUTLINE

max

0.1

b

p

0.4

0.3

IEC JEDEC EIAJ

b

0.7

0.5

1

cD

0.25

2.2

0.10

1.8

E

1.35

1.3

1.15

REFERENCES

e

HEL

e

1

2.2

2.0

0.45

0.15

Qwv

p

0.23

0.13

0.2y0.10.21.15

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

Fig 10. Package outline SOT343R

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 9 of 12

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BFG310W_XR_1 20050202 Product data sheet - 9397 750 14245 -

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 10 of 12

Philips Semiconductors

11. Data sheet status

BFG310W/XR

NPN 14 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representationor warranty that such applicationswill be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations orwarranties thatthese products are
free frompatent, copyright, ormask work right infringement, unless otherwise
specified.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 2 February 2005 11 of 12

Philips Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11

BFG310W/XR

NPN 14 GHz wideband transistor

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 2 February 2005

Document number: 9397 750 14245