Philips BFG310W, BFG310XR Technical data

BFG310W

BFG310W/XR

NPN 14 GHz wideband transistor

Rev. 01 — 2 February 2005	Product data sheet

1.Product profile

1.1General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

1.2Features

High power gain

Low noise figure

High transition frequency

Gold metallization ensures excellent reliability

1.3Applications

Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

analog and digital cellular telephones

cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

radar detectors

pagers

Satellite Antenna TeleVision (SATV) tuners

1.4Quick reference data

Table 1:	Quick reference data
Symbol	Parameter	Conditions		Min		Typ		Max	Unit
VCBO	collector-base voltage	open emitter	-			-	15		V
VCEO	collector-emitter voltage	open base	-			-	6		V
IC	collector current (DC)		-			-	10		mA
Ptot	total power dissipation	Tsp ≤ 145 °C	[1]	-		-	60		mW
hFE	DC current gain	IC = 5 mA; VCE = 3 V;	60			100	200
		Tj = 25 °C
CCBS	collector-base	VCB = 5 V; f = 1 MHz;	-			0.17	0.3		pF
	capacitance	emitter grounded
fT	transition frequency	IC = 5 mA; VCE = 3 V;	-			14	-		GHz
		f = 1 GHz; Tamb = 25 °C

Philips Semiconductors

BFG310W/XR

NPN 14 GHz wideband transistor

Table 1:

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MSG

maximum stable gain

IC = 5 mA; VCE = 3 V;

-

18

-

dB

f = 1.8 GHz; Tamb = 25 °C

|s |2

insertion power gain

I

C

= 5 mA; V

CE

= 3 V;

-

14

-

dB

21

f = 1.8 GHz; Tamb = 25 °C;

ZS = ZL = 50 Ω

NF

noise figure

Γs = Γopt; IC = 1 mA;

-

1

-

dB

VCE = 3 V; f = 2 GHz

[1]Tsp is the temperature at the soldering point of the collector pin.

2.Pinning information

	Table 2:	Pinning
	Pin	Description	Simplified outline		Symbol
	1	collector
			3	4	1
	2	emitter
	3	base			3
	4	emitter
					2, 4
			2	1	sym086

3. Ordering information

Table 3: Ordering information

Type number	Package
	Name	Description	Version
BFG310W/XR	-	plastic surface mounted package; reverse pinning;	SOT343R
		4 leads

4. Marking

Table 4: Marking codes

Type number	Marking code	[1]
BFG310W/XR	A7*

[1]* = p: made in Hong Kong.

9397 750 14245

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 2 February 2005

2 of 12

Philips Semiconductors			BFG310W/XR
			NPN 14 GHz wideband transistor

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
VCBO	collector-base voltage	open emitter	-		15	V
VCEO	collector-emitter voltage	open base	-		6	V
VEBO	emitter-base voltage	open collector	-		2	V
IC	collector current (DC)		-		10	mA
Ptot	total power dissipation	Tsp ≤ 145 °C	[1]	-	60	mW
Tstg	storage temperature			−65	+175	°C
Tj	junction temperature		-		175	°C

[1]Tsp is the temperature at the soldering point of the collector pin.

6. Thermal characteristics

Table 6:		Thermal characteristics
Symbol		Parameter	Conditions		Typ	Unit
R	th(j-sp)	thermal resistance from junction to solder point	T ≤ 145 °C	[1]	530	K/W
			sp

[1]Tsp is the temperature at the soldering point of the collector pin.

7. Characteristics

Table 7: Characteristics

Tj = 25 °C; unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

IE = 0 A; VCB = 6 V

-

-

15

nA

hFE

DC current gain

IC = 5 mA; VCE =

3

V

60

100

200

CCBS

collector-base capacitance

VCB = 5 V; f = 1 MHz; emitter grounded

-

0.17

0.3

pF

CCES

collector-emitter capacitance

VCE = 5 V; f = 1 MHz; base grounded

-

0.22

-

pF

CEBS

emitter-base capacitance

VEB = 0.5 V; f = 1 MHz; collector grounded

-

0.16

-

pF

fT

transition frequency

IC = 5 mA; VCE =

3

V; f = 1 GHz;

-

14

-

GHz

Tamb = 25 °C

MSG

maximum stable gain

IC = 5 mA; VCE =

3

V; f = 1.8 GHz;

-

18

-

dB

Tamb = 25 °C

|s |2

insertion power gain

I

= 5 mA; V

CE

=

3

V; T

amb

= 25 °C;

21

C

ZS = ZL = 50 Ω

f = 1.8 GHz

-

14

-

dB

f = 3 GHz

-

11

-

dB

NF

noise figure

Γs = Γopt; IC = 1 mA; VCE = 3 V; f = 2 GHz

-

1

-

dB

PL(1dB)

output power at 1 dB gain

IC = 5 mA; VCE =

3

V; f = 1.8 GHz;

-

1.8

-

dBm

compression

Tamb = 25 °C; ZS = ZL = 50 Ω

IP3

third order intercept point

IC = 5 mA; VCE =

3

V; f = 1.8 GHz;

-

8.5

-

dBm

Tamb = 25 °C; ZS = ZL = 50 Ω

9397 750 14245

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 2 February 2005

3 of 12

Philips Semiconductors			BFG310W/XR
			NPN 14 GHz wideband transistor

	70						001aac177		10						001aac178
Ptot
								IC						IB = 120 μA
(mW)								(mA)
	60
										8				100 μA
	50
														80 μA
	40									6
														60 μA
	30									4
														40 μA
	20
										2				20 μA
	10
		0								0
		0		50	100	150	200			0	1	2	3	4	5	6
						Tsp (°C)									VCE (V)
Fig 1.		Power derating curve						Fig 2.		Collector current as a function of
										collector-emitter voltage; typical values
0.20							001aac179		40						001aac180
CCBS								G
(pF)
								(dB)
0.19									30			MSG
0.18												s21 2
									20
0.17
									10
0.16
0.15										0		102		103		104
		0	1	2	3	4	5			10
							VCB (V)								f (MHz)
		IC = 0 mA; f = 1 MHz.								IC = 5 mA; VCE = 3 V.
Fig 3.		Collector-base capacitance as a function of						Fig 4.		Gain as a function of frequency; typical values
		collector-base voltage; typical values

9397 750 14245

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 2 February 2005

4 of 12