Philips BFG310W, BFG310XR Technical data
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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005 Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability
1.3 Applications
■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
◆ analog and digital cellular telephones
◆ cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
◆ radar detectors
◆ pagers
◆ Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
V
I
P
h
C
f
CBO
CEO
C
tot
FE
CBS
T
collector-base voltage open emitter - - 15 V
collector-emitter voltage open base - - 6 V
collector current (DC) - - 10 mA
total power dissipation Tsp≤ 145 °C
DC current gain IC= 5 mA; VCE=3V;
T
=25°C
j
collector-base
capacitance
transition frequency IC= 5 mA; VCE=3V;
VCB= 5 V; f = 1 MHz;
emitter grounded
f = 1 GHz; T
amb
=25°C
[1]
--60mW
60 100 200
- 0.17 0.3 pF
- 14 - GHz
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
MSG maximum stable gain IC= 5 mA; VCE=3V;
2
|
|s
21
insertion power gain IC= 5 mA; VCE=3V;
NF noise figure Γ
[1] Tsp is the temperature at the soldering point of the collector pin.
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 collector
2 emitter
3 base
4 emitter
…continued
f = 1.8 GHz; T
f = 1.8 GHz; T
Z
S=ZL
= Γ
s
opt
V
=3V; f=2GHz
CE
amb
amb
=50Ω
; IC= 1 mA;
=25°C
=25°C;
21
-18-dB
-14-dB
-1-dB
43
1
3
2, 4
sym086
3. Ordering information
Table 3: Ordering information
Type number Package
BFG310W/XR - plastic surface mounted package; reverse pinning;
4. Marking
Table 4: Marking codes
Type number Marking code
BFG310W/XR A7*
[1] * = p: made in Hong Kong.
Name Description Version
SOT343R
4 leads
[1]
9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 February 2005 2 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1] Tsp is the temperature at the soldering point of the collector pin.
collector-base voltage open emitter - 15 V
collector-emitter voltage open base - 6 V
emitter-base voltage open collector - 2 V
collector current (DC) - 10 mA
total power dissipation Tsp≤ 145 °C
[1]
-60mW
storage temperature −65 +175 °C
junction temperature - 175 °C
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
[1] Tsp is the temperature at the soldering point of the collector pin.
thermal resistance from junction to solder point Tsp≤ 145 °C
[1]
530 K/W
7. Characteristics
Table 7: Characteristics
Tj=25°C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
h
FE
C
CBS
C
CES
C
EBS
f
T
MSG maximum stable gain I
|s
21
NF noise figure Γ
P
L(1dB)
IP3 third order intercept point I
collector-base cut-off current IE= 0 A; VCB=6V --15nA
DC current gain IC= 5 mA; VCE = 3 V 60 100 200
collector-base capacitance VCB= 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF
collector-emitter capacitance VCE= 5 V; f = 1 MHz; base grounded - 0.22 - pF
emitter-base capacitance VEB= 0.5 V; f = 1 MHz; collector grounded - 0.16 - pF
transition frequency IC= 5 mA; VCE= 3 V; f = 1 GHz;
T
=25°C
amb
= 5 mA; VCE= 3 V; f = 1.8 GHz;
C
T
=25°C
amb
2
|
insertion power gain IC= 5 mA; VCE=3V; T
Z
S=ZL
=50Ω
amb
=25°C;
- 14 - GHz
-18-dB
f = 1.8 GHz - 14 - dB
f = 3 GHz - 11 - dB
= Γ
; IC= 1 mA; VCE= 3 V; f = 2 GHz - 1 - dB
s
opt
output power at 1 dB gain
compression
IC= 5 mA; VCE= 3 V; f = 1.8 GHz;
T
=25°C; ZS=ZL=50Ω
amb
= 5 mA; VCE= 3 V; f = 1.8 GHz;
C
T
=25°C; ZS=ZL=50Ω
amb
- 1.8 - dBm
- 8.5 - dBm
9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 February 2005 3 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
70
P
tot
(mW)
60
50
40
30
20
10
0
0 20015050 100
001aac177
Tsp (°C)
10
I
C
(mA)
8
6
4
2
0
0653142
IB = 120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
VCE (V)
Fig 1. Power derating curve Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac179
G
(dB)
40
30
MSG
C
(pF)
0.20
CBS
0.19
001aac178
001aac180
0.18
0.17
0.16
0.15
054231
VCB (V)
IC= 0 mA; f = 1 MHz. IC= 5 mA; VCE=3V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
2
s
20
10
0
10 10
21
2
10
3
10
f (MHz)
4
Fig 4. Gain as a function of frequency; typical values
9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 2 February 2005 4 of 12
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