Philips BFG31 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG31
PNP 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
FEATURES
• High output voltage capability
• High gain bandwidth product
• Good thermal stability
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
age
4
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
123
Top view
MSB002 - 1
It is intended for wideband amplifier
applications.
Fig.1 SOT223.
NPN complement is the BFG97.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
collector-emitter voltage open base −−−15 V
DC collector current −−−100 mA
total power dissipation up to Ts= 135 °C ; note 1 −−1W
DC current gain IC= −70 mA; VCE= −10 V;
T
=25°C
amb
transition frequency IC= −70 mA; VCE= −10 V;
maximum unilateral power
gain
f = 500 MHz; T
IC= −70 mA; VCE= −10 V;
f = 800 MHz; T
amb
amb
= 25 °C
=25°C
output voltage IC= −100 mA; VCE= −10 V;
RL=75Ω; T
amb
= 25 °C
25 −−
− 5.0 − GHz
− 12 − dB
− 600 − mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−3V
DC collector current −−100 mA
total power dissipation up to Ts= 135 °C; note 1 − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1995 Sep 12 2
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
cb
C
eb
C
re
f
T
G
UM
V
o
V
o
collector-base breakdown voltage open emitter; IC= −10 mA −20 −−V
collector-emitter breakdown voltage open base; IC= −10 mA −18 −−V
emitter-base breakdown voltage open collector; IE= −0.1 mA −3 −−V
collector cut-off current IE= 0; VCB= −10 V −−−1µA
DC current gain IC= −70 mA; VCE= −10 V;
collector-base capacitance IC= 0; VCB= −10 V; f = 1 MHz; − 1.8 − pF
emitter-base capacitance IC= 0; VEB= −10 V; f = 1 MHz − 5 − pF
feedback capacitance IC= 0; VCE= −10 V; f = 1 MHz;
transition frequency IC= −70 mA; VCE= −10 V;
maximum unilateral power gain; note 1 IC= −70 mA; VCE= −10 V;
output voltage note 2 − 600 − mV
output voltage note 3 − 550 − mV
up to Ts= 135 °C; note 1 40 K/W
25 −−
T
=25°C
amb
− 1.6 − pF
T
=25°C
amb
− 5 − GHz
f = 500 MHz; T
amb
=25°C
− 16 − dB
f = 500 MHz; T
I
= −70 mA; VCE= −10 V;
C
f = 800 MHz; T
amb
amb
=25°C
− 12 − dB
=25°C
Notes
1. G
2. d
is the maximum unilateral power gain, assuming S12 is zero and
UM
= −60 dB; IC= −70 mA; VCE= −10 V; RL=75Ω; T
im
amb
=25°C;
Vp=Vo at dim= −60 dB; fp= 850.25 MHz;
Vq=Vo−6 dB; fq= 858.25 MHz;
Vr=Vo−6 dB;fr= 860.25 MHz;
measured at f
= 848.25 MHz.
(p+q−r)
3. dim= −60 dB (DIN 45004B); IC= −70 mA; VCE= −10 V; RL=75Ω; T
Vp=Vo= at dim= −60 dB; fp= 445.25 MHz;
Vq=Vo−6 dB; fq= 453.25 MHz;
Vr=Vo−6 dB; fr= 455.25 MHz;
measured at f
= 443.25 MHz.
(p+q−r)
1995 Sep 12 3
G
amb
10
UM
=25°C;
2
s
-----------------------------------------------------------1s
–()1s
21
2
11
–()
22
dB.log=
2
Loading...