Philips BFG25A-X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG25A/X
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 29
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
handbook, 2 columns
34
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
12
Top view
Marking code: V11.
MSB014
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage −−8V
collector-emitter voltage −−5V
collector current (DC) −−6.5 mA
total power dissipation Ts≤ 165 °C −−32 mW
DC current gain IC= 0.5 mA; VCE=1V 5080200
transition frequency IC= 1 mA; VCE=1V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE=1V;
C
f = 1 GHz; Γ = Γ
I
= 1 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
opt
; T
amb
amb
=25°C
; T
opt
=25°C
amb
=25°C
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
1997 Oct 29 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
collector current (DC) − 6.5 mA
total power dissipation Ts≤ 165 °C; note 1 − 32 mW
storage temperature −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 320 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure I
Note
1. G
collector leakage current IE= 0; VCB=5V −−50 µA
DC current gain IC= 0.5 mA; VCE=1V 5080200
feedback capacitance IC=ic= 0; VCB= 1 V; f = 1 MHz − 0.21 0.3 pF
transition frequency IC= 1 mA; VCE=1V;
T
=25°C; f = 500 MHz
amb
maximum unilateral power gain
(note 1)
is the maximum unilateral power gain, assuming S12 is zero and
UM
IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
I
Γ = Γ
; T
opt
= 1 mA; VCE= 1 V; f = 1 GHz;
C
; T
opt
amb
amb
amb
=25°C
=25°C
=25°C
G
UM
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
10 log
--------------------------------------------------------------
1
S
–
11
2
S
21
2
1
–
dB=
2
S
22
1997 Oct 29 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFG25A/X
40
handbook, halfpage
P
tot
(mW)
30
20
10
0
0 50 100 200
150
Fig.2 Power derating curve.
MRC038 - 1
Ts (oC)
100
handbook, halfpage
h
FE
80
60
40
20
0
10
VCE=1V.
3
2
10
1
110
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
MCD138
10
0.3
handbook, halfpage
C
re
(pF)
0.2
0.1
0
0
IC=ic= 0; f= 1 MHz.
246
MCD139
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
1997 Oct 29 4
handbook, halfpage
6
f
T
(GHz)
4
2
0
0
VCE= 1 V; f = 500 MHz; T
12 4
amb
=25°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
3
MCD140
I (mA)
C
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