Philips BFG25AW-X Datasheet
DATA SH EET
ook, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
BFG25AW
1 collector
2 base
page
34
21
3 emitter
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
4 emitter
BFG25AW/X
1 collector
2 emitter
3 base
4 emitter
Top view
Fig.1 SOT343N.
MARKING
TYPE NUMBER CODE
BFG25AW N6
BFG25AW/X V1
MBK523
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage open emitter −−8V
collector-emitter voltage open base −−5V
collector current (DC) −−6.5 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 0.5 mA; VCE=1V 5080200
feedback capacitance IC= 0; VCE= 1 V; f = 1 MHz − 0.2 0.3 pF
transition frequency IC= 1 mA; VCE= 1 V; f = 500 MHz; T
maximum unilateral
IC= 0.5 mA; VCE= 1 V; f = 1 GHz; T
=25°C 3.5 5 − GHz
amb
=25°C − 16 − dB
amb
power gain
F noise figure Γ
; IC= 1 mA; VCE=1V; f=1GHz − 2 − dB
s=Γopt
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
collector current (DC) − 6.5 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1998 Sep 23 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure Γ
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
is the temperature at the soldering point of the collector pin.
collector-base breakdown voltage IC= 100 µA; IE=0 −−8V
collector-emitter breakdown voltage IC= 1 mA; IB=0 −−5V
emitter-base breakdown voltage IE= 100 µA; IC=0 −−2V
collector leakage current open emitter; VCB=5V; IE=0 −−50 nA
DC current gain IC= 0.5 mA; VCE=1V 5080200
feedback capacitance IC= 0; VCE= 1 V; f = 1 MHz − 0.2 0.3 pF
transition frequency IC= 1 mA; VCE= 1 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power gain;
note 1
IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE=1V;
I
C
f = 2 GHz; T
; IC= 0.5 mA; VCE=1V;
s=Γopt
amb
amb
=25°C
=25°C
3.5 5 − GHz
− 16 − dB
− 8 − dB
− 1.9 − dB
f = 1 GHz
Γ
; IC= 1 mA; VCE=1V;
s=Γopt
− 2dB
f = 1 GHz
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero.
UM
1998 Sep 23 3
G
UM
10
--------------------------------------------------------------
2
S
21
1S
2
–()1S
11
–()
dB.log=
2
22
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
150
T ( C)
Fig.2 Power derating curve.
MBG248
s
110
MCD138
I (mA)
C
10
100
handbook, halfpage
h
FE
80
60
40
20
0
3
o
10
VCE=1V.
2
10
1
Fig.3 DC current gain as a function of collector
current; typical values.
0.3
handbook, halfpage
C
re
(pF)
0.2
0.1
0
0246
IC= 0; f= 1 MHz.
V (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
CE
MLB971
handbook, halfpage
6
f
T
(GHz)
4
2
0
0
f = 500 MHz; VCE= 1 V; T
14
amb
23
=25°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
MLB972
I (mA)
C
1998 Sep 23 4
Philips Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X
30
handbook, halfpage
gain
(dB)
G
20
10
0
0
f = 500 MHz; VCE=1V.
1
UM
MSG
2
Fig.6 Gain as a function of collector current;
typical values.
I (mA)
C
MLB973
G
UM
MSG
I (mA)
C
MLB974
3
30
handbook, halfpage
gain
(dB)
20
10
0
3
0
f = 1 GHz; VCE=1V.
1
2
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
40
G
UM
30
MSG
20
10
0
10
IC= 0.5 mA; VCE=1V.
Fig.8 Gain as a function of frequency;
2
10
typical values.
MLB975
3
10
f (MHz)
4
10
50
handbook, halfpage
gain
(dB)
40
G
30
MSG
20
10
0
10
IC= 1 mA; VCE=1V.
UM
2
10
10
3
f (MHz)
MLB976
4
10
Fig.9 Gain as a function of frequency;
typical values.
1998 Sep 23 5
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