Philips BFG21W Datasheet

DISCRETE SEMICONDUCTORS

M3D124

BFG21W

UHF power transistor

Product specification
Supersedes data of 1997 Nov 21

1998 Jul 06

File under Discrete Semiconductors, SC14

Philips Semiconductors Product specification

UHF power transistor BFG21W

FEATURES

• High power gain

• High efficiency

• 1.9 GHz operating area

• Linear and non-linear operation.

APPLICATIONS

• Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.

• Driver for DCS1800, 1900.

DESCRIPTION

NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.

PINNING

handbook, halfpage

Marking code: P1.

PIN DESCRIPTION

1, 3 emitter

2 base
4 collector

43

21

Top view

MSB842

Fig.1 Simplified outline SOT343R.

QUICK REFERENCE DATA

RF performance at T

≤ 60 °C in a common emitter test circuit.

s

MODE OF OPERATION

Pulsed class-AB; δ < 1 : 2; t

f

(GHz)

= 5 ms 1.9 3.6 26 ≥10 typ.55

p

V

(V)

CE

P

L

(dBm)

G

(dB)

p

η

(%)

C

1998 Jul 06 2

Philips Semiconductors Product specification

UHF power transistor BFG21W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 500 mA
total power dissipation Ts≤ 60 °C; note 1 − 600 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to

Ts≤ 60 °C; P

= 600 mW; note 1 150 K/W

tot

soldering point

Note

1. Ts is the temperature at the soldering point of the emitter pins.

δ =

tp (s)

t

p

T

t

MGM219

1

3

10

handbook, full pagewidth

R

th

(K/W)

2

10

10

1

−6

10

δ =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

1

P

0

−5

10

−4

10

−3

10

−2

10

t

p

T

−1

10

At temperature stabilization solder point has been reached.

Fig.2 Transient thermal resistance as a function of pulse time; typical values.

1998 Jul 06 3

Philips Semiconductors Product specification

UHF power transistor BFG21W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)CER

V

(BR)EBO

I

CES

h

FE

C

c

C

re

f

T

APPLICATION INFORMATION

RF performance at T

collector-base breakdown voltage open emitter; IC= 0.1 mA 15 − V
collector-emitter breakdown voltage open base; IC= 10 mA 4.5 − V
collector-emitter breakdown voltage RBE<1kΩ, IC=10mA 10 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA 1 − V
collector leakage current VCE=5V; VBE=0 − 10 µA
DC current gain IC= 200 mA; VCE= 2 V 40 100
collector capacitance IE=ie= 0; VCB= 3 V; f = 1 MHz − 3pF
feedback capacitance IC= 0; VCB= 3.6 V; f = 1 MHz − 1.5 pF
transition frequency IC= 200 mA; VCE= 3.6 V;

18 − GHz

f = 700 MHz

≤ 60 °C in a common emitter test circuit (see Figs 4 and 5).

s

MODE OF OPERATION

Pulsed; class-AB; δ < 1 : 2; t

f

(GHz)

= 5 ms 1.9 3.6 1 26 ≥10 typ. 55

p

V

Ruggedness in class-AB operation

The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions: δ =1:2;
tp= 5 ms; f = 1.9 GHz at VCE= 4.5 V.

CE

(V)

I

CQ

(mA)

16

handbook, halfpage

G

p

(dB)

12

8

4

0

5

P

L

(dBm)

10 30

15 20 25

G

(dB)

G

p

η

C

p

MGM220

PL (dBm)

η

(%)

80

η

(%)

60

40

20

0

C

C

1998 Jul 06 4

Pulsed, class-AB operation; δ< 1 : 2; tp= 5 ms.
f = 1.9 GHz; VCE= 3.6 V; ICQ= 1 mA; tuned at PL= 26 dBm.

Fig.3 Power gain and collector efficiency as a

function of the load power; typical values.