Philips BFG198 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG198
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
ge
4
4 collector
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
DC collector current −−100 mA
total power dissipation up to Ts= 135 °C (note 1) −−1W
DC current gain IC= 50 mA; VCE=5V; Tj=25°C4090−
transition frequency IC= 50 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power
gain
IC= 50 mA; VCE= 8 V; f = 500 MHz;
T
=25°C
amb
I
= 50 mA; VCE= 8 V; f = 800 MHz;
C
T
=25°C
amb
output voltage dim= −60 dB; IC= 70 mA; VCE=8V;
RL=75Ω; T
f
= 793.25 MHz
(p+q−r)
amb
=25°C;
− 8 − GHz
− 18 − dB
− 15 − dB
− 700 − mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
DC collector current − 100 mA
total power dissipation up to Ts= 135 °C (note 1) − 1W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
1995 Sep 12 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
V
o
d
2
thermal resistance from junction to soldering point up to Ts= 135 °C (note 1) 40 K/W
is the temperature at the soldering point of the collector tab.
collector cut-off current IE= 0; VCB=5V −−100 nA
DC current gain IC= 50 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 1.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 4 − pF
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.8 − pF
transition frequency IC= 50 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power
gain; note 1
IC= 50 mA; VCE= 8 V; f = 500 MHz;
T
=25°C
amb
= 50 mA; VCE= 8 V; f = 800 MHz;
I
C
T
=25°C
amb
− 8 − GHz
− 18 − dB
− 15 − dB
output voltage note 2 − 750 − mV
note 3 − 700 − mV
second order
note 4 −−55 − dB
intermodulation distortion
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2. dim= −60 dB (DIN 45004B); IC= 70 mA; VCE= 8 V; RL=75Ω; T
Vp=Vo at dim= −60 dB;
Vq=Vo−6 dB; fp= 445.25 MHz;
V
measured at f
−6 dB; fq= 453.25 MHz; fr= 455.25 MHz
r=Vo
= 443.25 MHz.
(p+q−r)
3. dim= −60 dB (DIN 45004B); IC= 70 mA; VCE= 8 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q−r)
4. IC= 50 mA; VCE= 8 V; Vo= 50 dBmV;
f
= 810 MHz; fp= 250 MHz; fq= 560 MHz.
(p+q)
1995 Sep 12 3
amb
amb
G
UM
=25°C;
=25°C;
10
-----------------------------------------------------------1s
–()1s
11
2
s
21
2
–()
22
dB.log=
2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
C6
VCC= 8 V
output
Ω
75
handbook, full pagewidth
V
BB
input
75
C5
L6
MBB754
C4
R3 R4
L4
L5
DUT
L3
C3
R1
L1C1
Ω
C2
L2
R2
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.
C2 multilayer ceramic capacitor 1.2 pF 2222 851 12128
C1, C4, C6, C7 multilayer ceramic capacitor 10 nF 2222 590 08627
C3 multilayer ceramic capacitor 10 nF 2222 851 12128
C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103
C8 multilayer ceramic capacitor 1.5 pF 2222 851 12158
L1 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L2 microstripline 75 Ω length 22 mm;
width 2.5 mm
L3 (note 1) 0.4 mm copper wire ≈24 nH length 30 mm
L4 (note 1) 0.4 mm copper wire ≈3.6 nH length 4 mm
L5 microstripline 75 Ω length 19 mm;
width 2.5 mm
L6 Ferroxcube choke 5 µH 3122 108 20153
R1 metal film resistor 10 Ω 2322 180 73103
R2 (note 1) metal film resistor 220 Ω 2322 180 73221
R3, R4 metal film resistor 30 Ω 2322 180 73309
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε
thickness1⁄16inch; thickness of copper sheet 2 x 35 µm; see Fig.2.
1995 Sep 12 4
= 2.2);
r
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