Philips BFG197-XR, BFG197-X, BFG197 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
PINNING
PIN DESCRIPTION
BFG197 (Fig.1) Code: V5
1 collector
2 base
3 emitter
4 emitter
BFG197/X (Fig.1) Code: V13
1 collector
2 emitter
3 base
4 emitter
BFG197A/XR (Fig.2) Code: V35
1 collector
2 emitter
3 base
4 emitter
BFG197; BFG197/X;
BFG197/XR
handbook, 2 columns
12
Top view
Fig.1 SOT143.
handbook, 2 columns
34
MSB014
43
12
Top view
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
collector current DC value −−100 mA
total power dissipation up to Ts=75°C; note 1 −−350 mW
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.85 − pF
transition frequency IC= 50 mA; VCE= 4 V; f = 2 GHz − 7.5 − GHz
maximum unilateral
power gain
IC= 50 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
I
= 50 mA; VCE=6V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 15 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
− 16 − dB
− 10 − dB
− 1.7 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
S
1995 Sep 13 2
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
Note
1. T
S
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current DC value, continuous − 100 mA
total power dissipation up to Ts=75°C; note 1 − 350 mW
storage temperature range −65 +150 °C
junction operating temperature − 175 °C
from junction to soldering point; note 1 290 K/W
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure Γ
d
2
collector leakage current IE= 0; VCB=5V −−100 nA
DC current gain IC= 50 mA; VCE=5V 40 110 −
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 1.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 3.3 − pF
feedback capacitance IC=ic= 0; VCB=8V; f=1MHz − 0.85 − pF
transition frequency IC= 50 mA; VCE= 4 V; f = 2 GHz − 7.5 − GHz
maximum unilateral power gain
(note 1)
second order intermodulation
IC= 50 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= 50 mA; VCE=6V;
I
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 15 mA; VCE=8V;
s
opt
T
=25°C; f = 1 GHz
amb
= Γ
Γ
T
; IC= 50 mA; VCE=6V;
s
opt
=25°C; f = 2 GHz
amb
− 16 − dB
− 10 − dB
− 1.7 − dB
− 2.3 − dB
VCE=6V;Vo= 50 dBmV; −−51 − dB
distortion
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
G
UM
10
-----------------------------------------------------------1s
–()1s
2
s
21
2
11
2
–()
22
dB.log=
1995 Sep 13 3
Philips Semiconductors Product specification
NPN 7 GHz wideband transistor
150
MBC983 - 2
o
Ts(
C)
800
handbook, halfpage
P
tot
(mW)
600
400
200
0
0 50 100 200
160
handbook, halfpage
h
FE
120
80
40
0
BFG197; BFG197/X;
BFG197/XR
MBB267
40 120
80
I (mA)
C
1.2
handbook, halfpage
C
re
(pF)
0.8
0.4
0
0
VCE=5V.
Fig.4 DC current gain as a function of collector
Fig.3 Power derating curve.
MCD155
210
468
V (V)
CB
handbook, halfpage
8
f
T
(GHz)
6
4
2
0
02040 80
current.
60
MCD156
I (mA)
C
IC=ic= 0; f= 1MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
1995 Sep 13 4
VCE= 4 V; T
=25°C; f = 2 GHz.
amb
Fig.6 Transition frequency as a function of
collector current.
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