Philips bfg17 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG17A
NPN 3 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFG17A
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN DESCRIPTION
Code: E6
1 collector
2 base
3 emitter
4 emitter
handbook, 2 columns
12
Top view
34
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
C
re
G
UM
F noise figure I
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−15 V
DC collector current −−50 mA
total power dissipation up to Ts=85°C; note 1 −−300 mW
DC current gain IC= 25 mA; VCE=1V;
T
=25°C
amb
transition frequency IC= 25 mA; VCE=5V;
f = 500 MHz; T
amb
=25°C
20 − 150
− 2.8 − GHz
feedback capacitance IC= 0; VCE= 5 V; f = 1 MHz − 0.4 − pF
maximum unilateral power gain IC= 15 mA; VCE=10V;
f = 800 MHz; T
= 2 mA; VCE= 5 V; f = 800 MHz;
C
T
=25°C; ZS=60Ω; bs= opt.
amb
amb
=25°C
− 15 − dB
− 2.5 − dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 50 mA
total power dissipation up to Ts=85°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1995 Sep 12 2
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFG17A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
to soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
C
C
G
c
e
re
UM
collector cut-off current IE= 0; VCB=10V −−50 nA
DC current gain IC= 25 mA; VCE=1V;
transition frequency IC= 25 mA; VCE=5V;
collector capacitance IE= 0; VCB= 10 V; f = 1 MHz;
emitter capacitance IC= 0; VEB= 0.5 V; f = 1 MHz − 1.25 − pF
feedback capacitance IC= 0; VCE= 5 V; f = 1 MHz − 0.4 − pF
maximum unilateral power gain
(note 1)
F noise figure I
V
o
output voltage note 2 − 150 − mV
up to Ts=85°C; note 1 290 K/W
20 75 150
T
=25°C
amb
− 2.8 − GHz
f = 500 MHz; T
amb
=25°C
− 0.7 − pF
T
=25°C
amb
IC= 15 mA; VCE=10V;
f = 800 MHz; T
= 2 mA; VCE= 5 V; f = 800 MHz;
C
T
=25°C; ZS=60Ω; bs= opt.
amb
amb
=25°C
− 15 − dB
− 2.5 − dB
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero and .
UM
G
UM
10
2. dim= −60 dB (DIN 45004B, para. 6,3: 3-tone); IC= 14 mA; VCE= 10 V; ZL=75Ω.
Vp=Vo; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
V
measured at f
−6 dB; fr= 805.25 MHz;
r=Vo
(p+q−r)
= 793.25 MHz.
1995 Sep 12 3
2
s
-----------------------------------------------------------1s
–()1s
21
2
11
–()
22
dB.log=
2
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