Philips BFG16A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG16A
NPN 2 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFG16A
FEATURES
• High power gain
• Good thermal stability
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
page
4
4 collector
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
It is primarily intended for use in
123
Top view
MSB002 - 1
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−25 V
DC collector current −−150 mA
total power dissipation up to Ts=110°C; note 1 −−1W
DC current gain IC= 150 mA; VCE=5V; Tj=25°C25 80 −
transition frequency IC= 100 mA; VCE=10V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 100 mA; VCE=10V;
f = 500 MHz; T
amb
=25°C
− 1.5 − GHz
− 10 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts=110°C; note 1 − 1W
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12 2
Philips Semiconductors Product specification
NPN 2 GHz wideband transistor BFG16A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
to soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CEO
collector-emitter breakdown
voltage
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
emitter-base breakdown voltage open collector; IE= 0.1 mA 3 −−V
collector cut-off current IE= 0; VCB=28V −−20 µA
DC current gain IC= 150 mA; VCE=5V 25 80 −
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 2.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 10.0 − pF
feedback capacitance IC= 0; VCB=10V; f=1MHz − 1.5 − pF
transition frequency IC= 100 mA; VCE=10V;
maximum unilateral power gain
note 1
up to Ts=110°C; note 1 40 K/W
open emitter; IC= 0.1 mA 25 −−V
open base; IC=10mA 18 −−V
− 1.5 − GHz
f = 500 MHz; T
IC= 100 mA; VCE=10V;
f = 500 MHz; T
amb
amb
=25°C
− 10 − dB
=25°C
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
1995 Sep 12 3
2
s
G
UM
10
-----------------------------------------------------------1s
–()1s
21
2
11
–()
dB.log=
2
22
Loading...