Philips BFG135 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG135
NPN 7GHz wideband transistor
Product specification
File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
ge
4
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−15 V
DC collector current −−150 mA
total power dissipation up to Ts= 145 °C (note 1) −−1W
DC current gain IC= 100 mA; VCE= 10 V; Tj=25°C 80 130 −
transition frequency IC= 100 mA; VCE= 10 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power
gain
IC= 100 mA; VCE= 10 V; f = 500 MHz;
T
=25°C
amb
I
= 100 mA; VCE= 10 V; f = 800 MHz;
C
T
=25°C
amb
output voltage dim= −60 dB; IC= 100 mA; VCE=10V;
RL=75Ω; T
f
= 793.25 MHz
(p+q−r)
amb
=25°C;
− 7 − GHz
− 16 − dB
− 12 − dB
− 850 − mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 145 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
1995 Sep 13 2
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
R
th j-s
thermal resistance from junction to soldering
up to Ts= 145 °C (note 1) 30 K/W
THERMAL
RESISTANCE
point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
V
o
collector cut-off current IE= 0; VCB=10V −−1µA
DC current gain IC= 100 mA; VCE= 10 V 80 130 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 7 − pF
feedback capacitance IC= 0; VCE= 10 V; f = 1 MHz − 1.2 − pF
transition frequency IC= 100 mA; VCE= 10 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power
gain
IC= 100 mA; VCE=10V;
f = 500 MHz; T
I
= 100 mA; VCE=10V;
C
f = 800 MHz; T
amb
amb
=25°C
=25°C
− 7 − GHz
− 16 − dB
− 12 − dB
output voltage note 1 − 900 − mV
note 2 − 850 − mV
d
2
second order intermodulation
distortion
IC= 90 mA; VCE=10V;
VO= 50 dBmV; T
f
= 450 MHz;
(p+q)
amb
=25°C;
−−58 − dB
fp= 50 MHz; fq= 400 MHz
= 90 mA; VCE=10V;
I
C
VO= 50 dBmV; T
= 810 MHz;
f
(p+q)
amb
=25°C;
−−53 − dB
fp= 250 MHz; fq= 560 MHz
Notes
1. d
= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
im
Vp=Vo at dim= −60 dB; fp= 445.25 MHz;
Vq=Vo−6 dB; fq= 453.25 MHz;
Vr=Vo−6 dB; fr= 455.25 MHz;
measured at f
= 443.25 MHz.
(p+q−r)
2. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q−r)
1995 Sep 13 3
amb
amb
=25°C;
=25°C;
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
V
handbook, full pagewidth
C4
V
BB
input
75
L6
C3
R1
L1C1
Ω
L2
C2
R2
L3
DUT
R3 R4
L5
C6
L4
MBB284
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
C5
C7
CC
output
75
Ω
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstripline 75 Ω length 7 mm;
width 2.5 mm
L2 microstripline 75 Ω length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 Ω length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 µH 3122 108 20153
L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm
R1 metal film resistor 10 kΩ 2322 180 73103
R2 (note 1) metal film resistor 200 Ω 2322 180 73201
R3, R4 metal film resistor 27 Ω 2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε
1
⁄16inch; thickness of copper sheet1⁄32inch.
= 2.2); thickness
r
1995 Sep 13 4
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