Philips BFG11-X, BFG11 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG11; BFG11/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
1995 Apr 07
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG11; BFG11/X
FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB operation in hand-held radio
equipment at 1.9 GHz.
PINNING
PIN DESCRIPTION
BFG11 (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
DESCRIPTION
NPN silicon planar epitaxial transistors encapsulated in a
plastic, 4-pin dual-emitter SOT143 package.
MARKING
TYPE NUMBER CODE
BFG11 N72
BFG11/X N73
handbook, 2 columns
12
Top view
34
MSB014
BFG11/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
Fig.1 SOT143.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common-emitter test circuit (see Fig.7).
amb
f
(GHz)
V
(V)
CE
P
L
(mW)
G
(dB)
p
(%)
Pulsed, class-AB, duty cycle < 1 : 8 1.9 3.6 400 ≥4 ≥50
η
c
1995 Apr 07 2
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG11; BFG11/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 500 mA
average collector current − 500 mA
total power dissipation up to Ts=60°C; note 1; see Fig.2 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
thermal resistance from junction to soldering point up to Ts=60°C; note 1;
P
= 400 mW
tot
290 K/W
Note to the “Limiting values” and “Thermal characteristics”
is the temperature at the soldering point of the collector pin.
1. T
s
150
MLC818
o
T ( C)
s
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 200
Fig.2 Power derating curve.
1995 Apr 07 3
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG11; BFG11/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.1 mA; IE=0 20 − V
collector-emitter breakdown voltage open base; IC= 10 mA; IB=0 8 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA; IC= 0 2.5 − V
collector cut-off current VCE=8V; VBE=0 − 100 µA
DC current gain IC= 100 mA; VCE=5V 25 −
collector capacitance IE=ie= 0; VCB= 3.6 V; f = 1 MHz − 4pF
feedback capacitance IC= 0; VCE= 3.6 V; f = 1 MHz − 3pF
handbook, halfpage
4
C
c
(pF)
3
2
1
0
01048
IC= 0; f= 1 MHz.
2
6
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
MLC848
VCB(V)
1995 Apr 07 4
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