Philips BFG10W-X Datasheet
DATA SH EET
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 22
DISCRETE SEMICONDUCTORS
BFG10W/X
UHF power transistor
1995 Sep 22 2
Philips Semiconductors Product specification
UHF power transistor BFG10W/X
FEATURES
• High efficiency
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating
areas
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig.1 SOT343.
Marking code: T5.
page
Top view
MBK523
21
34
QUICK REFERENCE DATA
RF performance at T
amb
=25°C in a common-emitter test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(mW)
G
p
(dB)
η
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms 1.9 3.6 200 ≥5 ≥50
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 4.6 ms 0.9 6 650 ≥10 ≥50
0.9 6 360 ≥12.5 ≥50
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 20 V
V
CEO
collector-emitter voltage open base − 10 V
V
EBO
emitter-base voltage open collector − 2.5 V
I
C
collector current (DC) − 250 mA
I
C(AV)
average collector current − 250 mA
P
tot
total power dissipation up to Ts= 102 °C; note 1 − 400 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
up to Ts= 102 °C; note 1;
P
tot
= 400 mW
180 K/W
1995 Sep 22 3
Philips Semiconductors Product specification
UHF power transistor BFG10W/X
CHARACTERISTICS
T
j
=25°C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage open emitter; IC= 0.1 mA 20 − V
V
(BR)CEO
collector-emitter breakdown voltage open base; IC=5mA 10 − V
V
(BR)EBO
emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 − V
I
CES
collector cut-off current VCE=6V; VBE=0 − 100 µA
h
FE
DC current gain IC= 50 mA; VCE=5V 25 −
C
c
collector capacitance IE=ie= 0; VCB=6V; f=1MHz − 3pF
C
re
feedback capacitance IC= 0; VCE= 6 V; f = 1 MHz − 2pF
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
MBG431
10
−5
10
−6
10
−4
10
−3
10
−2
10
−1
1
10
3
10
2
10
1
Z
th j-a
(K/W)
tp (s)
δ = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
t
p
T
P
t
t
p
T
δ
=
Loading...