Philips BF871, BF869 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
BF869; BF871
NPN high-voltage transistors
Product specification Supersedes data of 1996 Dec 09
1999 Apr 12
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
FEATURES
Low feedback capacitance.
handbook, halfpage
APPLICATIONS
For use in class-B video output stages in colour television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package. PNP complement: BF872.
1
PINNING
PIN DESCRIPTION
123
MBH793
1 emitter 2 collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3 base
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF869 250 V BF871 300 V
V
CEO
collector-emitter voltage open base
BF869 250 V BF871 300 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector 5V collector current (DC) 50 mA peak collector current peak value 100 mA peak base current 50 mA total power dissipation T
25 °C 1.6 W
amb
T
25 °C 5W
mb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
R
th j-mb
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient 78 K/W thermal resistance from junction to mounting base 25 K/W
collector cut-off current IE= 0; VCB= 200 V 10 nA
I
= 0; VCB= 200 V; Tj= 150 °C10µA
E
emitter cut-off current IC= 0; VEB=5V 50 nA DC current gain IC= 25 mA; VCE=20V 50 collector-emitter saturation voltage IC= 30 mA; IB=5mA 600 mV feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz 2pF transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 MHz
1999 Apr 12 3
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