DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D067
BF869; BF871
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 12
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in class-B video output stages in colour
television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
PNP complement: BF872.
1
PINNING
PIN DESCRIPTION
123
MBH793
1 emitter
2 collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3 base
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF869 − 250 V
BF871 − 300 V
V
CEO
collector-emitter voltage open base
BF869 − 250 V
BF871 − 300 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 50 mA
peak collector current peak value − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C − 1.6 W
amb
T
≤ 25 °C − 5W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
R
th j-mb
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient 78 K/W
thermal resistance from junction to mounting base 25 K/W
collector cut-off current IE= 0; VCB= 200 V − 10 nA
I
= 0; VCB= 200 V; Tj= 150 °C10µA
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 25 mA; VCE=20V 50 −
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 600 mV
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 2pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1999 Apr 12 3