Philips bf869 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF869; BF871
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Product specification
NPN high-voltage transistors BF869; BF871
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in class-B video output stages in colour
television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
PNP complements: BF870 and BF872.
1
PINNING
PIN DESCRIPTION
123
MBH793
1 emitter
2 collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3 base
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF869 − 250 V
BF871 − 300 V
V
CEO
collector-emitter voltage open base
BF869 − 250 V
BF871 − 300 V
I
CM
P
tot
h
FE
C
re
f
T
peak collector current − 100 mA
total power dissipation Tmb≤ 25 °C − 5W
DC current gain IC= 25 mA; VCE=20V; Tj=25°C50−
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 2pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1996 Dec 09 2
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