Philips BF862 Datasheet
DISCRETE SEMICONDUCTORS
M3D088
DATA SHEET
BF862
N-channel junction FET
Preliminary specification 1999 Jun 29
Philips Semiconductors Preliminary specification
N-channel junction FET BF862
FEATURES
• High transition frequency for excellent sensitivity in
AM car radios
• High transfer admittance.
PINNING SOT23
PIN DESCRIPTION
1 source
2drain
3 gate
APPLICATIONS
• Pre-amplifiers in AM car radios.
handbook, halfpage
3
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
12
MSB003Top view
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
V
GS (off)
I
DSS
P
tot
|y
| transfer admittance 30 40 − mS
fs
T
j
drain-source voltage −−20 V
gate-source cut-off voltage −−0.7 − V
drain-source current 10 − 25 mA
total power dissipation Ts≤ 92 °C −−225 mW
junction temperature −−150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29 2
Philips Semiconductors Preliminary specification
Fig.2 Power derating curve.
handbook, halfpage
0 40 80 160
250
0
200
MGS298
120
150
100
50
P
tot
(mW)
Ts (°C)
N-channel junction FET BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DG
V
GS
I
DS
I
G
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
drain-source voltage − 20 V
drain-gate voltage − 20 V
gate-source voltage −−20 V
drain-source current − 40 mA
forward gate current − 10 mA
total power dissipation Ts≤ 92 °C − 225 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to soldering point note 1 260 K/W
Notes
1. Soldering point of the gate lead.
1999 Jun 29 3
Loading...