Philips BF861C, BF861B, BF861A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF861A; BF861B; BF861C
N-channel junction FETs
Product specification
Supersedes data of 1995 Apr 14
File under Discrete Semiconductors, SC07
1997 Sep 04
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
APPLICATIONS
• Preamplifiers for AM tuners in car radios.
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT23 package.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
QUICK REFERENCE DATA
handbook, halfpage
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
21
Top view
3
g
MAM036
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
d
s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
DSS
DS
drain-source voltage (DC) − 25 V
drain current VGS= 0; VDS=8V
BF861A 2 6.5 mA
BF861B 6 15 mA
BF861C 12 25 mA
P
tot
forward transfer admittance VGS= 0; VDS=8V
y
fs
total power dissipation up to T
=25°C − 250 mW
amb
BF861A 12 20 mS
BF861B 16 25 mS
BF861C 20 30 mS
C
iss
C
rss
input capacitance f = 1 MHz − 10 pF
reverse transfer capacitance f = 1 MHz − 2.7 pF
1997 Sep 04 2
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
DGO
I
G
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
drain-source voltage (DC) − 25 V
gate-source voltage open drain − 25 V
drain-gate voltage (DC) open source − 25 V
forward gate current (DC) − 10 mA
total power dissipation up to T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
300
P
tot
(mW)
200
100
0
0 50 100 150
Fig.2 Power derating curve.
T
amb
MRC166
o
( C)
1997 Sep 04 3
Philips Semiconductors Product specification
N-channel junction FETs BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C; VDS= 8 V; VGS= 0; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
y
forward transfer admittance
fs
g
os
C
iss
C
rss
V
/√B equivalent input noise voltage VGS= 0; f = 1 MHz − 1.5 − nV/√Hz
n
thermal resistance from junction to ambient; note 1 500 K/W
gate-source breakdown voltage IG= −1 µA −25 −−V
gate-source cut-off voltage ID=1µA
BF861A −0.2 −−1V
BF861B −0.5 −−1.5 V
BF861C −0.8 −−2V
gate-source forward voltage VDS= 0; IG=1mA −−1V
drain current
BF861A 2 − 6.5 mA
BF861B 6 − 15 mA
BF861C 12 − 25 mA
gate cut-off current VGS= −20 V; VDS=0 −−−1nA
BF861A 12 − 20 mS
BF861B 16 − 25 mS
BF861C 20 − 30 mS
common source output
conductance
BF861A −−200 µS
BF861B −−250 µS
BF861C −−300 µS
input capacitance f = 1 MHz −−10 pF
reverse transfer capacitance f = 1 MHz − 2.1 2.7 pF
1997 Sep 04 4
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