Philips bf851 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BF851A; BF851B; BF851C
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 14
Philips Semiconductors Product specification
N-channel junction FETs BF851A; BF851B; BF851C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
APPLICATIONS
• Preamplifiers for AM tuners in car radios.
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT54 (TO-92) package.
PINNING - SOT54 (TO-92)
handbook, halfpage
1
2
3
g
MAM042
Fig.1 Simplified outline and symbol.
d
s
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
CAUTION
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
DSS
DS
drain-source voltage (DC) − 25 V
drain current VGS= 0; VDS=8V
BF851A 2 6.5 mA
BF851B 6 15 mA
BF851C 12 25 mA
P
tot
forward transfer admittance VGS= 0; VDS=8V
y
fs
total power dissipation up to T
=40°C − 400 mW
amb
BF851A 12 20 mS
BF851B 16 25 mS
BF851C 20 30 mS
C
iss
C
rss
input capacitance f = 1 MHz − 10 pF
reverse transfer capacitance f = 1 MHz − 3pF
1995 Apr 14 2
Philips Semiconductors Product specification
N-channel junction FETs BF851A; BF851B; BF851C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
DGO
I
G
P
tot
T
stg
T
j
Note
1. Device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm
drain-source voltage (DC) − 25 V
gate-source voltage open drain − 25 V
drain-gate voltage (DC) open source − 25 V
forward gate current (DC) − 10 mA
total power dissipation up to T
=40°C; note 1 − 400 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
2
.
600
P
tot
(mW)
400
200
0
0 50 100 150
Fig.2 Power derating curve.
T
amb
MBD478
o
( C)
1995 Apr 14 3
Philips Semiconductors Product specification
N-channel junction FETs BF851A; BF851B; BF851C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm
CHARACTERISTICS
=25°C; VDS= 8 V; VGS= 0; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
forward transfer admittance
y
fs
g
os
C
iss
C
rss
/√B equivalent input noise voltage VGS= 0; f = 1 MHz − 1.5 − nV/√Hz
V
n
thermal resistance from junction to ambient; note 1 250 K/W
2
.
gate-source breakdown voltage IG= −1 µA −25 −−V
gate-source cut-off voltage ID=1µA
BF851A −0.2 −−1V
BF851B −0.5 −−1.5 V
BF851C −0.8 −−2V
gate-source forward voltage VDS= 0; IG=1mA −−1V
drain current
BF851A 2 − 6.5 mA
BF851B 6 − 15 mA
BF851C 12 − 25 mA
gate cut-off current VGS= −20 V; VDS=0 −−−1nA
BF851A 12 − 20 mS
BF851B 16 − 25 mS
BF851C 20 − 30 mS
common source output
conductance
BF851A −−200 µS
BF851B −−250 µS
BF851C −−300 µS
input capacitance f = 1 MHz −−10 pF
reverse transfer capacitance f = 1 MHz − 2.4 3 pF
1995 Apr 14 4
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