Philips BF824 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BF824
PNP medium frequency transistor
Product specification
Supersedes data of 1997 Jul 08
1999 Apr 15
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
BF824 F8∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−30 V
emitter-base voltage open collector −−4V
collector current (DC) −−25 mA
peak collector current −−25 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
C
f
T
BE
re
collector cut-off current IE= 0; VCB= −30 V −−−50 nA
emitter cut-off current IC= 0; VEB= −4V −−−100 nA
DC current gain IC= −1 mA; VCE= −10 V 25 45 −
= −4 mA; VCE= −10 V 25 50 −
I
C
base-emitter voltage IC= −4 mA; VCE= −10 V −−−900 mV
feedback capacitance IC= 0; VCE= −10 V; f = 1 MHz −−0.3 pF
transition frequency VCE= −10 V; f = 100 MHz
I
= −1 mA 250 350 − MHz
C
I
= −4 mA 400 450 − MHz
C
= −8 mA 390 440 − MHz
I
C
1999 Apr 15 3
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