Philips BF823, BF821 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BF821; BF823
PNP high-voltage transistors
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 15
Philips Semiconductors Product specification
PNP high-voltage transistors BF821; BF823
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BF820, BF822.
MARKING
TYPE NUMBER MARKING CODE
(1)
BF821 1W∗
BF823 1Y∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF821 −−300 V
BF823 −−250 V
V
CEO
collector-emitter voltage open base
BF821 −−300 V
BF823 −−250 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−50 mA
peak collector current −−100 mA
peak base current −−50 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
PNP high-voltage transistors BF821; BF823
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −200 V −−10 nA
I
= 0; VCB= −200 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −25 mA; VCE= −20 V 50 −
collector-emitter saturation voltage IC= −30 mA; IB= −5mA −−800 mV
feedback capacitance IC=ic= 0; VCB= −30 V; f = 1 MHz − 1.6 pF
transition frequency IC= −10 mA; VCE= −10 V;
60 − MHz
f = 100 MHz
1999 Apr 15 3
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