Philips BF820, BF822 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BF820; BF822
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 15
Philips Semiconductors Product specification
NPN high-voltage transistors BF820; BF822
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BF821; BF823.
MARKING
TYPE NUMBER MARKING CODE
(1)
BF820 1V∗
BF822 1X∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF820 − 300 V
BF822 − 250 V
V
CEO
collector-emitter voltage open base
BF820 − 300 V
BF822 − 250 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF820; BF822
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= 200 V − 10 nA
I
= 0; VCB= 200 V; Tj=150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 25 mA; VCE=20V 50 −
collector-emitter saturation
IC= 30 mA; IB=5mA − 600 mV
voltage
feedback capacitance IC=ic= 0; VCB= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1999 Apr 15 3
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