Philips BF819 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF819
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors Product specification
NPN high-voltage transistor BF819
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 250 V).
APPLICATIONS
• Driver for a line output transistor in colour television
receivers.
DESCRIPTION
NPN high-voltage transistor in a TO-202; SOT128B plastic
package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
3 base
handbook, halfpage
2
3
1
123
MAM305
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
C
re
f
T
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 250 V
peak collector current − 300 mA
total power dissipation T
≤ 75 °C − 6W
amb
DC current gain IC= 20 mA, VCE=10V 45 −
feedback capacitance IC=ic= 0; VCB= 30 V; f = 1 MHz − 3.5 pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1997 Sep 03 2
Philips Semiconductors Product specification
NPN high-voltage transistor BF819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 250 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 75 °C − 1.2 W
amb
T
≤ 75 °C − 6W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient in free air 62.5 K/W
thermal resistance from junction to mounting base 12.5 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
I
CBO
I
EBO
h
V
C
C
f
T
FE
CEsat
c
re
collector cut-off current IE= 0; VCB= 250 V − 50 nA
= 0; VCB= 250 V; Tj= 150 °C − 5 µA
I
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 20 mA; VCE=10V 45 −
collector-emitter saturation voltage IC= 200 mA; IB=20mA − 11 V
collector capacitance IE=ie= 0; VCB= 30 V; f = 1 MHz − 4.5 pF
feedback capacitance IC=ic= 0; VCB= 30 V; f = 1 MHz − 3.5 pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1997 Sep 03 3
Loading...