Philips BF763 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BF763

NPN 2 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BF763

DESCRIPTION

NPN transistor in a plastic SOT54
(TO-92 variant) envelope.

It is primarily intended for use in RF
amplifiers and oscillators.

PINNING

PIN DESCRIPTION

Code: F763
1 emitter
2 base
3 collector

1

2

3

MSB034

Fig.1 SOT54.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CEO

I

C

P

tot

h

FE

f

T

collector-emitter breakdown voltage open base 15 −− V
DC collector current −−25 mA
total power dissipation up to T

=60°C −−360 mW

amb

DC current gain IC= 5 mA; VCE= 10 V; Tj=25°C25 − 250
transition frequency IC= 5 mA; VCE= 10 V; f = 100 MHz − 1.8 − GHz

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I
P
T
T

CBO
CEO

C

tot
stg
j

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 25 V
DC collector current − 25 mA
total power dissipation up to T

=60°C − 360 mW

amb

storage temperature −65 150 °C
junction temperature − 150 °C

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-a

thermal resistance from junction to

in free air 250 K/W

ambient

September 1995 2