Philips BF723 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BF723
PNP high-voltage transistor
Product specification
Supersedes data of 1996 Dec 05
1999 Apr 21
Philips Semiconductors Product specification
PNP high-voltage transistor BF723
FEATURES
• Low feedback capacitance.
APPLICATIONS
• Class-B video output stages of colour television
receivers
• General purpose high voltage circuits.
handbook, halfpage
4
2, 4
1
DESCRIPTION
PNP transistor in a SOT223 plastic package.
NPN complement: BF722.
123
Top view
MAM288
3
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
Fig.1 Simplified outline (SOT223) and symbol.
3 emitter
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−250 V
collector-emitter voltage open base −−250 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 21 2
2
.
Philips Semiconductors Product specification
PNP high-voltage transistor BF723
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 106 K/W
thermal resistance from junction to soldering point note 1 25 K/W
2
.
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −200 V −−10 nA
= 0; VCB= −200 V; Tj= 150 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −25 mA; VCE= −20 V −50 −
collector-emitter saturation voltage IC= −30 mA; IB= −5mA −−0.6 V
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1 MHz − 2.5 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
1999 Apr 21 3
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