Philips BF689K Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BF689K

NPN 2 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BF689K

DESCRIPTION

NPN transistor in a plastic SOT54
(TO-92 variant) envelope. It is
intended for application as an
amplifier or oscillator in the VHF and
UHF range.

PINNING

PIN DESCRIPTION

Code: F689
1 emitter
2 base
3 collector

1

2

3

MSB034

Fig.1 SOT54.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

f

T

collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−15 V
DC collector current −−25 mA
total power dissipation up to T

= 60 °C −−360 mW

amb

DC current gain IC = 2 mA; VCE = 5 V; Tj = 25 °C20−−

I

= 20 mA; VCE = 5 V; Tj = 25 °C35−−

C

transition frequency IC = 15 mA; VCE = 5 V; f = 500 MHz − 1.8 − GHz

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V
I
I
P
T
T

CBO
CEO
CER

EBO
C
CM

tot

stg
j

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE≤ 50 Ω−25 V
emitter-base voltage open collector − 3.5 V
DC collector current − 25 mA
peak collector current tp< 1 µs − 50 mA
total power dissipation up to T

= 60 °C − 360 mW

amb

storage temperature −55 150 °C
junction temperature − 150 °C

September 1995 2