Philips BF1101, BF1101R DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BF1101; BF1101R; BF1101WR

N-channel dual-gate MOS-FETs

Product specification
Supersedes data of 1999 Feb 01

1999 May 14

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

FEATURES

• Short channel transistor with high
forward transfer admittance to input
capacitance ratio

• Low noise gain controlled amplifier
up to 1 GHz

• Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.

APPLICATIONS

• VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.

DESCRIPTION

Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.

PINNING

PIN DESCRIPTION

1 source
2 drain
3 gate 2
4 gate 1

handbook, 2 columns

12

Top view

BF1101 marking code: NDp.

Fig.1 Simplified outline

(SOT143B).

34

MSB014

handbook, 2 columns

Top view

BF1101R marking code: NCp.

Fig.2 Simplified outline

(SOT143R).

page

21

Top view

BF1101WR marking code: NC.

Fig.3 Simplified outline

(SOT343R).

43

12

MSB035

43

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DS

I

D

P

tot

y

 forward transfer admittance 25 30 − mS

fs

C

ig1-ss

C

rss

drain-source voltage −−7V
drain current −−30 mA
total power dissipation −−200 mW

input capacitance at gate 1 − 2.2 2.7 pF

reverse transfer capacitance f = 1 MHz − 25 35 fF
F noise figure f = 800 MHz − 1.7 2.5 dB
X

mod

cross-modulation input level for k = 1% at

100 −−dBµV

40 dB AGC

T

j

operating junction temperature −−150 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 May 14 2

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

I

D

I

G1

I

G2

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

drain-source voltage − 7V
drain current − 30 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation Ts≤ 110 °C; note 1 − 200 mW
storage temperature −65 +150 °C
operating junction temperature − +150 °C

is the temperature of the soldering point of the source lead.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

handbook, halfpage

P

tot

(mW)

thermal resistance from junction to soldering point 200 K/W

250

200

150

100

50

0

0 50 100 200

MGL615

150

Ts (°C)

Fig.4 Power derating curve.

1999 May 14 3

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

STATIC CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)DSS

V

(BR)G1-SS

V

(BR)G2-SS

V

(F)S-G1

V

(F)S-G2

V

G1-S (th)

V

G2-S (th)

I

DSX

I

G1-SS

I

G2-SS

drain-source breakdown voltage V
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
forward source-gate 1 voltage V
forward source-gate 2 voltage V
gate 1-source threshold voltage V
gate 2-source threshold voltage V
drain-source current V

gate 1 cut-off current V
gate 2 cut-off current V

G1-S=VG2-S
G2-S=VDS
G1-S=VDS
G2-S=VDS
G1-S=VDS

=4V; VDS=5V; ID= 100 µA 0.3 1.0 V

G2-S

=5V; VDS=5V; ID= 100 µA 0.3 1.2 V

G1-S

=4V; VDS=5V; RG1= 120 kΩ;

G2-S

note 1

G2-S=VDS
G1-S=VDS

= 0; ID=10µA7−V
= 0; I
= 0; I
= 0; I
= 0; I

= 10 mA 7 16 V

G1-S

= 10 mA 7 16 V

G2-S

= 10 mA 0.5 1.5 V

S-G1

= 10 mA 0.5 1.5 V

S-G2

816mA

= 0; V
= 0; V

=5V − 50 nA

G1-S

=4V − 20 nA

G2-S

Note

1. R

connects G1 to VGG= 5 V; see Fig.21.

G1

DYNAMIC CHARACTERISTICS

Common source; T

=25°C; V

amb

= 4 V; VDS= 5 V; ID= 12 mA; unless otherwise specified.

G2-S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

 forward transfer admittance pulsed; Tj=25°C 253040mS

y

fs

C

ig1-ss

C

ig2-ss

C

oss

C

rss

F noise figure f = 800 MHz; Y
X

mod

input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF
input capacitance at gate 2 f = 1 MHz − 1.6 − pF
output capacitance f = 1 MHz − 1.2 − pF
reverse transfer capacitance f = 1 MHz − 25 35 fF

S=YS opt

cross-modulation input level for k = 1% at 0 dB AGC;

fw= 50 MHz; f

= 60 MHz; note 1

unw

input level for k = 1% at 40 dB AGC;
f

= 50 MHz; f

w

= 60 MHz; note 1

unw

− 1.7 2.5 dB
85 −−dBµV

100 −−dBµV

Note

1. Measured in test circuit of Fig.21.

1999 May 14 4

Philips Semiconductors Product specification

N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

20

handbook, halfpage

I

D

(mA)

16

12

8

4

0

0

VDS=5V.
Tj=25°C.

0.4

0.8 1.2 1.6 2

V

G2-S

= 4 V

3.5 V

V

G1-S

Fig.5 Transfer characteristics; typical values.

MGS299

2.5 V

1.5 V

(V)

3 V

2 V

1 V

20

handbook, halfpage

I

D

(mA)

16

12

8

4

0

V

=4V.

G2-S

Tj=25°C.

0

V

= 1.6 V

G1-S

1.5 V

1.4 V

1.3 V

1.2 V

1.1 V
1 V

2

468

Fig.6 Output characteristics; typical values.

V

MGS300

DS

(V)

100

handbook, halfpage

I

G1

(µA)

80

60

40

20

0

0

VDS=5V.
Tj=25°C.

0.5

V

= 4 V

G2-S

1 1.5 2 2.5

V

Fig.7 Gate 1 current as a function of gate 1

voltage; typical values.

3.5 V

G1-S

3 V

2.5 V

2 V

(V)

MGS301

40

handbook, halfpage

y

fs

(mS)

30

20

10

0

0

VDS=5V.
Tj=25°C.

81641220

Fig.8 Forward transfer admittance as a

function of drain current; typical values.

V

G2-S

MGS302

= 4 V

3.5 V
3 V

2.5 V

2 V

ID (mA)

1999 May 14 5