Philips BDP32 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
BDP32
PNP medium power transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 23
Philips Semiconductors Product specification
PNP medium power transistor BDP32
FEATURES
• High current (max. 3 A)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2,4 collector
APPLICATIONS
3 emitter
• General purpose medium power applications.
DESCRIPTION
handbook, halfpage
4
2, 4
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BDP31.
123
Top view
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−45 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−3A
peak collector current −−6A
peak base current −−0.5 A
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for the SOT223 in the General Part of associated
1999 Apr 23 2
2
.
Philips Semiconductors Product specification
PNP medium power transistor BDP32
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 91 K/W
thermal resistance from junction to soldering point 10 K/W
“Thermal considerations for the SOT223 in the General Part of associated
.
collector cut-off current IE= 0; VCB= −40 V −−50 nA
= 0; VCB= −40 V; Tj= 150 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.5 A; VCE= −12 V; note 1; see Fig.2 40 −
I
= −2 A; VCE= −1 V; note 1; see Fig.2 20 −
C
collector-emitter saturation
voltage
IC= −500 mA; IB= −50 mA; note 1 −−300 mV
I
= −2 A; IB= −200 mA; note 1 −−700 mV
C
base-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−1.2 V
I
= −2 A; IB= −200 mA; note 1 −−1.5 V
C
transition frequency VCE= −5 V; IC= −250 mA; f = 100 MHz 60 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 23 3
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