Philips BD829, BD825 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D067
BD825; BD829
NPN power transistors
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1998 May 29
Philips Semiconductors Product specification
NPN power transistors BD825; BD829
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose
• Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic
package. PNP complements: BD826 and BD830.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
2
3
1
123
MAM305
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BD825 −−45 V
BD829 −−100 V
V
CEO
collector-emitter voltage open base
BD825 −−45 V
BD829 −−80 V
I
CM
P
tot
h
FE
f
T
peak collector current −−1.5 A
total power dissipation T
≤ 25 °C −−2W
amb
T
≤ 50 °C −−8W
mb
DC current gain IC= 150 mA; VCE=2V 95 − 165
transition frequency IC= 50 mA; VCE= 5 V; f = 100 MHz − 250 − MHz
1998 May 29 2
Philips Semiconductors Product specification
NPN power transistors BD825; BD829
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BD825 − 45 V
BD829 − 100 V
collector-emitter voltage open base
BD825 − 45 V
BD829 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 1.5 A
peak base current − 500 mA
total power dissipation T
≤ 25 °C − 2W
amb
T
≤ 50 °C − 8W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient in free air 62.5 K/W
thermal resistance from junction to mounting base 12.5 K/W
1998 May 29 3
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