Philips BD623, BD621 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 21
DISCRETE SEMICONDUCTORS
BF621; BF623
PNP high-voltage transistors
ook, halfpage
M3D109
1999 Apr 21 2
Philips Semiconductors Product specification
PNP high-voltage transistors BF621; BF623
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Video output stages.
DESCRIPTION
PNP high-voltage transistor in a SOT89 plastic package.
NPN complements: BF620 and BF622.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM297
3
2
1
MARKING
TYPE NUMBER MARKING CODE
BF621 DF
BF623 DB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF621 −−300 V
BF623 −−250 V
V
CEO
collector-emitter voltage open base
BF621 −−300 V
BF623 −−250 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−50 mA
I
CM
peak collector current −−100 mA
I
BM
peak base current −−50 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.25 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 21 3
Philips Semiconductors Product specification
PNP high-voltage transistors BF621; BF623
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
R
th j-s
thermal resistance from junction to soldering point 20 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −200 V −−10 nA
I
E
= 0; VCB= −200 V; Tj= 150 °C −−10 µA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−50 nA
h
FE
DC current gain IC= −25 mA; VCE= −20 V 50 −
V
CEsat
collector-emitter saturation voltage IC= −30 mA; IB= −5mA −−800 mV
C
re
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1 MHz − 1.6 pF
f
T
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
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