Philips bd438 DATASHEETS
BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
SGS-THOMSONPREFERREDSALESTYPES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
mediumpower linearand switchingapplications.
The BD433 is especially suitable for use in
car-radiooutput stages.
The complementary PNP types are BD434,
BD436,and BD438respectively.
SOT-32
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val ue Uni t
NPN BD433 BD435 BD437
PNP B D434 BD436 BD438
V
V
V
V
I
P
T
For PNPtypesvoltage a nd current values are negative.
Collector-B ase Voltage (IE=0) 22 32 45 V
CBO
Collector-E mit t e r Voltage (VBE=0) 22 32 45 V
CES
Collector-E mit t e r Voltage (IB=0) 22 32 45 V
CEO
Emitter-B ase Voltage (IC=0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Curr ent (t ≤ 10 ms) 7 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc≤ 25 oC36W
tot
St orage T em peratu re -65 to 150
stg
Max. Opera ting Junct ion T em perat ure 150
T
j
o
C
o
C
October 1995
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BD433/434/435/436/437/438
THERMAL DATA
R
thj-case
R
thj-amb
Therm al Resistance J unct ion-case Max
Therm al Resistance J unct ion-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter T est Conditions Min. Typ. Max. Unit
I
CBO
I
CES
I
EBO
V
CEO(sus)
Collect or Cut-off
Current (I
E
=0)
Collect or Cut-off
Current (V
BE
=0)
Emitter Cut-off Current
(I
=0)
C
∗ Collector-Emitt er
Sust aining V olt a ge
=0)
(I
B
V
∗ Collector-Emitter
CE(sat)
Sat urat ion Voltage
VBE∗ Base-Emitter Voltage IC=10mA VCE=5V
for BD433/434 V
for BD435/436 V
for BD437/438 V
for BD433/434 V
for BD435/436 V
for BD437/438 V
=5V 1 mA
V
EB
I
=100mA forBD433/434
C
=22V
CB
=32V
CB
=45V
CB
=22V
CB
=32V
CB
=45V
CB
forBD43 5/ 436
forBD437/438
22
32
45
100
100
100
100
100
100
IC=2A IB=0.2A
forBD43 3/ 434
forBD43 5/ 436
forBD437/438
0.2
0.2
0.2
0.5
0.5
0.6
0.58
=2A VCE=1V
I
C
forBD43 3/ 434
forBD43 5/ 436
forBD437/438
1.1
1.1
1.2
hFE∗ DC Cur rent Gain IC=10mA VCE=5V
I
I
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
∗ Matched Pa ir IC = 500 mA VCE=1V 1.4
f
Tra nsit i on frequ ency IC=250mA VCE=1V 3 MHz
T
forBD43 3/ 434
forBD43 5/ 436
forBD437/438
=500mA VCE=1V
C
=2A VCE=1V
C
forBD43 3/ 434
forBD43 5/ 436
forBD437/438
40
40
30
85
50
50
40
130
130
130
140
µA
µA
µA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
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