Philips BD330 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BD330
PNP power transistor
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 26
Philips Semiconductors Product specification
PNP power transistor BD330
FEATURES
• High current (max. 3 A)
• Low voltage (max. 20 V).
APPLICATIONS
• Power switching and amplification, especially in portable
equipment or e.g. car radio output stages.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complement: BD329.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM272
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−3A
peak collector current −−3A
peak base current −−1A
total power dissipation Tmb≤ 45 °C − 15 W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 26 2
Philips Semiconductors Product specification
PNP power transistor BD330
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
thermal resistance from junction to ambient in free air 100 K/W
thermal resistance from junction to mounting base 7 K/W
collector cut-off current IE= 0; VCB= −32 V −−−100 nA
I
= 0; VCB= −32 V; Tj= 150 °C −−−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −5 mA; VCE= −10 V 50 −−
I
=−0.5 A; VCE= −1 V; see Fig.2 85 − 375
C
I
= −2 A; VCE= −1 V; see Fig.2 40 −−
C
collector-emitter saturation voltage IC= −2 A; IB= −0.2 A −−−0.5 V
base-emitter voltage IC= −5 mA; VCE= −10 V −−600 − mV
I
= −2 A; VCE= −1V −−−1.2 V
C
transition frequency IC= −50 mA; VCE= −5V;
− 100 − MHz
f = 100 MHz
400
handbook, full pagewidth
h
FE
300
200
100
0
−1
−10
VCE= −1V.
MGD845
−1
−10 −10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
1999 Apr 26 3
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