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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BD230
NPN power transistor
Product specification
Supersedes data of 1997 Mar 06
1999 Apr 21
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Philips Semiconductors Product specification
NPN power transistor BD230
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages in television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD231.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 100 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 1.5 A
peak collector current − 3A
peak base current − 1A
total power dissipation Tmb≤ 62 °C − 12.5 W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 21 2
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Philips Semiconductors Product specification
NPN power transistor BD230
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to mounting base 7 K/W
collector cut-off current IE= 0; VCB=30V −− 100 nA
I
= 0; VCB= 30 V; Tj= 125 °C −− 10 µA
E
emitter cut-off current IC= 0; VEB=5V −− 100 nA
DC current gain VCE= 2 V; see Fig.2
= 5 mA 40 −−
I
C
I
= 150 mA 40 − 250
C
I
=1A 25 −−
C
collector-emitter saturation voltage IC= 1 A; IB= 0.1 A −− 0.8 V
base-emitter saturation voltage IC= 1 A; IB= 0.1 A −− 1.2 V
base-emitter voltage IC= 1 A; VCE= 2 V; note 1 −− 1.3 V
transition frequency IC= 50 mA; VCE= 5 V; f = 100 MHz − 125 − MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.3 1.6
C
complementary pairs
Note
1. V
decreases by about 2.3 mV/K with increasing temperature.
BE
1999 Apr 21 3