Philips BD139-16, BD139, BD135, BD137-16, BD137-10 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
handbook, halfpage
2
3
1
123
Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BD135 − 45 V
BD137 − 60 V
BD139 − 100 V
V
CEO
collector-emitter voltage open base
BD135 − 45 V
BD137 − 60 V
BD139 − 80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1.5 A
peak collector current − 2A
peak base current − 1A
total power dissipation Tmb≤ 70 °C − 8W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 12 2
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note1 100 K/W
thermal resistance from junction to mounting base 10 K/W
collector cut-off current IE= 0; VCB=30V −−100 nA
I
= 0; VCB=30V; Tj= 125 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain VCE= 2 V; (see Fig.2)
= 5 mA 40 −−
I
C
I
= 150 mA 63 − 250
C
I
= 500 mA 25 −−
C
DC current gain I
BD135-10; BD137-10; BD139-10 63 − 160
= 150 mA; VCE=2V;
C
(see Fig.2)
BD135-16; BD137-16; BD139-16 100 − 250
collector-emitter saturation voltage IC= 500 mA; IB=50mA −−0.5 V
base-emitter voltage IC= 500 mA; VCE=2V −−1V
transition frequency IC= 50 mA; VCE=5V;
− 190 − MHz
f = 100 MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.3 1.6
C
complementary pairs
1999 Apr 12 3
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