Philips BCP69-25, BCP69 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BCP69
PNP medium power transistor
Product specification
Supersedes data of 1997 Mar 12
1999 Apr 08
Philips Semiconductors Product specification
PNP medium power transistor BCP69
FEATURES
• High current (max. 1 A)
• Low voltage (max. 20 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification
• Power applications such as audio output stages.
handbook, halfpage
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
4
2, 4
1
package. NPN complement: BCP68.
123
Top view
MAM288
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08 2
2
.
Philips Semiconductors Product specification
PNP medium power transistor BCP69
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note1 91 K/W
thermal resistance from junction to soldering point 10 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −25 V −−−100 nA
= 0; VCB= −25 V; Tj= 150 °C −−−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −5 mA; VCE= −10 V 50 −−
I
=−500 mA; VCE= −1 V; see Fig.2 85 − 375
C
I
= −1 A; VCE= −1 V; see Fig.2 60 −−
C
DC current gain I
= −500 mA; VCE= −1 V; see Fig.2
C
BCP69-16 100 − 250
BCP69-25 160 − 375
collector-emitter saturation voltage IC= −1 A; IB= −100 mA −−−500 mV
base-emitter voltage IC= −5 mA; VCE= −10 V −−620 − mV
I
= −1 A; VCE= −1V −−−1V
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 48 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 40 −−MHz
DC current gain ratio of the
I
= 0.5 A; VCE =1V −−1.6
C
complementary pairs
1999 Apr 08 3
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