Philips BCP56, BCP54, BCP55 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BCP54; BCP55; BCP56
NPN medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08
Philips Semiconductors Product specification
NPN medium power transistors BCP54; BCP55; BCP56
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
APPLICATIONS
3 emitter
• Switching.
DESCRIPTION
handbook, halfpage
4
2, 4
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
123
Top view
1
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCP54 − 45 V
BCP55 − 60 V
BCP56 − 100 V
V
CEO
collector-emitter voltage open base
BCP54 − 45 V
BCP55 − 60 V
BCP56 − 80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 1.5 A
peak base current − 0.2 A
total power dissipation T
≤ 25 °C; note 1 − 1.33 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08 2
2
.
Philips Semiconductors Product specification
NPN medium power transistors BCP54; BCP55; BCP56
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 94 K/W
thermal resistance from junction to soldering point 13 K/W
2
.
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB=30V −−100 nA
= 0; VCB=30V; Tj= 125 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 5 mA; VCE=2V 25 −−
I
= 150 mA; VCE=2V 63 − 250
C
I
= 500 mA; VCE=2V 25 −−
C
DC current gain IC= 150 mA; VCE=2V −
BCP55-10; 56-10 63 − 160
BCP54-16; 55-16; 56-16 100 − 250
collector-emitter saturation voltage IC= 0.5 A; IB=50mA −−500 mV
base-emitter voltage IC= 0.5 A; VCE=2V −−1V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz − 130 − MHz
DC current gain ratio of the
= 150 mA; VCE =2V −−1.6
I
C
complementary pairs
1999 Apr 08 3
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