Philips BCF30, BCF29 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCF29; BCF30
PNP general purpose transistors
Product specification
Supersedes data of September 1994
1997 May 22
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP general purpose transistors BCF29; BCF30
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• Low level, low noise general purpose applications in
thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCF32 and BCF33.
MARKING
TYPE NUMBER MARKING CODE
handbook, halfpage
Top view
3
1
21
MAM256
3
2
BCF29 C7p
BCF30 C8p
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
CBO
CEO
CM
tot
FE
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−32 V
peak collector current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
DC current gain IC= −2 mA; VCE= −5V
BCF29 120 260
BCF30 215 500
f
T
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz
1997 May 22 2
Philips Semiconductors Product specification
PNP general purpose transistors BCF29; BCF30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−32 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 May 22 3
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