Philips BC878 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC878
PNP Darlington transistor
Product specification
Supersedes data of 1997 Apr 22
1999 May 31
Philips Semiconductors Product specification
PNP Darlington transistor BC878
FEATURES
• High DC current gain (min. 1000)
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Relay drivers.
DESCRIPTION
PNP Darlington transistor in a TO-92 (SOT54) plastic
handbook, halfpage
1
2
3
1
package. NPN complements: BC875 and BC879.
MAM306
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−80 V
collector-emitter voltage VBE=0 −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
base current (DC) −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 31 2
Philips Semiconductors Product specification
PNP Darlington transistor BC878
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
collector cut-off current VBE= 0; VCE= −60 V −−−50 nA
emitter cut-off current IC= 0; VEB= −4V −−−50 nA
DC current gain IC= −150 mA; VCE= −10 V; see Fig.2 1000 −−
=−0.5 A; VCE= −10 V; see Fig.2 2000 −−
I
C
collector-emitter saturation
voltage
IC= −0.5 A; IB= −0.5 mA −−−1.3 V
I
= −1 A; IB= −1mA −−−1.8 V
C
base-emitter saturation voltage IC= −1 A; IB= −1mA −−−2.2 V
transition frequency IC= −0.5 A; VCE= −5 V; f = 100 MHz − 200 − MHz
turn-on time I
turn-off time −−700 ns
= −500 mA; I
Con
I
= 0.5 mA
Boff
= −0.5 mA;
Bon
−−500 ns
6000
handbook, full pagewidth
h
FE
5000
4000
3000
2000
1000
0
−1
−10
VCE= −10V.
−1 −10 −10
Fig.2 DC current gain; typical values.
MGD839
2
IC (mA)
−10
3
1999 May 31 3
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