Philips BC875, BC879 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC875; BC879
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 22
1999 May 28
Philips Semiconductors Product specification
NPN Darlington transistors BC875; BC879
FEATURES
• High DC current gain (min. 1000)
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Relay drivers.
DESCRIPTION
handbook, halfpage
1
2
3
1
NPN Darlington transistor in a TO-92 (SOT54) plastic
package. PNP complement: BC878.
MAM307
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC875 − 60 V
BC879 − 100 V
V
CES
collector-emitter voltage VBE=0
BC875 − 45 V
BC879 − 80 V
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
base current (DC) − 0.2 A
total power dissipation T
≤ 25 °C; note 1 − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
NPN Darlington transistors BC875; BC879
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
Switching times (between 10% and 90% levels)
t
on
t
off
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current
BC875 V
BC879 V
= 0; VCE=45V −−50 nA
BE
= 0; VCE=80V −−50 nA
BE
emitter cut-off current IC= 0; VEB=4V −−50 nA
DC current gain IC= 150 mA; VCE= 10 V; see Fig.2 1000 −−
= 0.5 A; VCE= 10 V; see Fig.2 2000 −−
I
C
collector-emitter saturation voltage IC= 0.5 A; IB= 0.5 mA −−1.3 V
I
= 1 A; IB=1mA −−1.8 V
C
base-emitter saturation voltage IC= 1 A; IB=1mA −−2.2 V
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz − 200 − MHz
turn-on time I
turn-off time − 1300 − ns
= 500 mA; I
Con
I
= −0.5 mA
Boff
= 0.5 mA;
Bon
− 500 − ns
1999 May 28 3
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