Philips BC868-25, BC868 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BC868
NPN medium power transistor
Product specification
Supersedes data of 1998 Jul 16
1999 Apr 08
Philips Semiconductors Product specification
NPN medium power transistor BC868
FEATURES
• High current (max. 1 A)
PINNING
PIN DESCRIPTION
• Low voltage (max. 20 V).
APPLICATIONS
• General purpose switching and amplification
• Power applications such as audio output stages.
handbook, halfpage
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complement: BC869.
MARKING
TYPE NUMBER MARKING CODE
BC868 CAC
BC868-25 CDC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 08 2
Philips Semiconductors Product specification
NPN medium power transistor BC868
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to soldering point 13 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”
collector cut-off current IE= 0; VCB=25V −−100 nA
I
= 0; VCB=25V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 5 mA; VCE=10V 50 −−
= 500 mA; VCE= 1 V; see Fig.2 85 − 375
I
C
I
= 1 A; VCE= 1 V; see Fig.2 60 −−
C
DC current gain
BC868-25 IC= 500 mA; VCE= 1 V; see Fig.2 160 − 375
collector-emitter saturation voltage IC= 1 A; IB= 100 mA −−500 mV
base-emitter voltage IC= 5 mA; VCE=10V − 620 − mV
I
= 1 A; VCE=1V −−1V
C
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 40 −−MHz
DC current gain ratio of the
= 0.5 A; VCE =1V −−1.6
I
C
complementary pairs
.
1999 Apr 08 3
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