Philips BC860B, BC859C, BC860C Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BC859; BC860
PNP general purpose transistors
Product specification
Supersedes data of 1998 Jul 16
1999 May 28
Philips Semiconductors Product specification
PNP general purpose transistors BC859; BC860
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
BC859B 4B∗ BC860B 4F∗
BC859C 4C∗ BC860C 4G∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC859 −−30 V
BC860 −−50 V
V
CEO
collector-emitter voltage open base
BC859 −−30 V
BC860 −−45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
PNP general purpose transistors BC859; BC860
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−1−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −5V;
BC859B; BC860B 220 − 475
see Figs 2 and 3
BC859C; BC860C 420 − 800
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−75 −300 mV
I
= −100 mA; IB= −5mA −−250 −650 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA; note 1 −−700 − mV
I
= −100 mA; IB= −5 mA; note 1 −−850 − mV
C
base-emitter voltage IC= −2 mA; VCE= −5 V; note 2 −600 −650 −750 mV
I
= −10 mA; VCE= −5 V; note 2 −−−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4.5 − pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
BC859B; BC860B;
f = 30 Hz to 15 kHz
−−4dB
BC859C; BC860C
noise figure IC= −200 µA; VCE= −5 V; RS=2kΩ;
BC859B; BC860B;
f = 1 kHz; B = 200 Hz
−−4dB
BC859C; BC860C
Notes
1. V
decreases by about −1.7 mV/K with increasing temperature.
BEsat
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 May 28 3
Loading...