Philips BC859W, BC860CW, BC859BW Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
BC859W; BC860W
PNP general purpose transistors
Product specification
Supersedes data of 1997 Sep 03
1999 Apr 12
Philips Semiconductors Product specification
PNP general purpose transistors BC859W; BC860W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC859W 4D∗ BC860W 4H∗
BC859BW 4B∗ BC860BW 4F∗
BC859CW 4C∗ BC860CW 4G∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC859W −−30 V
BC860W −−50 V
V
CEO
collector-emitter voltage open base
BC859W −−30 V
BC860W −−45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistors BC859W; BC860W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure;
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB= −30 V −−−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −5V;
BC859W; BC860W 220 − 800
see Figs 2 and 3
BC859BW; BC860BW 220 − 475
BC859CW; BC860CW 420 − 800
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−−300 mV
I
= −100 mA; IB= −5 mA; note 1 −−−650 mV
C
base-emitter voltage IC= −2 mA; VCE= −5 V 600 − 750 mV
I
= −10 mA; VCE= −5V −−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−5pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
I
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
= −200 µA; VCE= −5 V; RS=2kΩ;
C
f = 10 Hz to 15.7 kHz
I
=−200 µA; VCE= −5 V; RS=2kΩ;
C
f = 1 kHz; B = 200 Hz
−−4dB
−−4dB
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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