Philips BC860W, BC860BW, BC860AW, BC859CW, BC859AW Datasheet

DATA SH EET

Product specification
Supersedes data of 1997 Sep 03

1999 Apr 12

DISCRETE SEMICONDUCTORS

BC859W; BC860W

PNP general purpose transistors

ook, halfpage

M3D187

1999 Apr 12 2

Philips Semiconductors Product specification

PNP general purpose transistors BC859W; BC860W

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.

DESCRIPTION

PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.

MARKING

Note

1. ∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BC859W 4D∗ BC860W 4H∗
BC859BW 4B∗ BC860BW 4F∗
BC859CW 4C∗ BC860CW 4G∗

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

Fig.1 Simplified outline (SOT323) and symbol.

handbook, halfpage

MAM048

Top view

2

1

3

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC859W −−30 V
BC860W −−50 V

V

CEO

collector-emitter voltage open base

BC859W −−30 V
BC860W −−45 V

V

EBO

emitter-base voltage open collector −−5V

I

C

collector current (DC) −−100 mA

I

CM

peak collector current −−200 mA

I

BM

peak base current −−200 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 200 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

1999 Apr 12 3

Philips Semiconductors Product specification

PNP general purpose transistors BC859W; BC860W

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

amb

=25°C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector cut-off current IE= 0; VCB= −30 V −−−15 nA

I

E

= 0; VCB= −30 V; Tj= 150 °C −−−4µA

I

EBO

emitter cut-off current IC= 0; VEB= −5V −−−100 nA

h

FE

DC current gain IC= −2 mA; VCE= −5V;

see Figs 2 and 3

BC859W; BC860W 220 − 800
BC859BW; BC860BW 220 − 475
BC859CW; BC860CW 420 − 800

V

CEsat

collector-emitter saturation
voltage

IC= −10 mA; IB= −0.5 mA −−−300 mV
I

C

= −100 mA; IB= −5 mA; note 1 −−−650 mV

V

BE

base-emitter voltage IC= −2 mA; VCE= −5 V 600 − 750 mV

I

C

= −10 mA; VCE= −5V −−820 mV

C

c

collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−5pF

C

e

emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF

f

T

transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz

F noise figure;

BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW

I

C

= −200 µA; VCE= −5 V; RS=2kΩ;

f = 10 Hz to 15.7 kHz

−−4dB

I

C

=−200 µA; VCE= −5 V; RS=2kΩ;

f = 1 kHz; B = 200 Hz

−−4dB